Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors

You, Shuzhen; Li, X.; Decoutere, Stefaan; Groeseneken, G.; Chen, Z.; Liu, J.; Yamashita, Yoshifumi; Kobayashi, Kazutoshi

doi:10.1109/essderc.2019.8901817

Cited by 3 publications

(4 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For a better visualization, we depicted the initial 8 µs waveform in figure 6(a). In this simulation, the gate leakage was model as in [23]. It is shown that, within each pulse of switching, V G decreases with respect to time, and then stabilizes at the value in quasi-static mode, indicating a voltage distribution process of the V G from capacitance-dependence to resistance-dependence by the gate current of the LS HEMT, same as in the measurement.…”

Section: Gate Voltage Redistributionmentioning

confidence: 80%

“…At V GS > 0 V the gate leakage is dominated by the Schottky metal/p-GaN junction, whereas at V GS < 0 V the gate leakage is perimeter dependent. Both branches can be modeled using the Pool-Frenkel tunneling equation, as described in [23]. The V T instability of GaN HEMTs is a significant nonideality that impacts the GaN circuit-level performance.…”

Section: Adapted Mvsg Modelmentioning

confidence: 99%

“…The MIT virtual source GaN (MVSG) HEMT model is one of the compact model coalition (CMC) approved industry standard models for GaN HEMTs [20][21][22]. In our previous work, the MVSG model has been validated for a discrete component of p-GaN gate HEMTs as well as for the circuit block [23]. However, this is insufficient for GaN IC design because of neglecting some device reliability issues.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

GaN power ICs design using the MIT virtual source GaNFET compact model with GateLeakage and V _T instability effect

You¹,

Li²,

Geens³

et al. 2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This work presents the MIT virtual source GaNFET model for GaN integrated circuit (IC) design, which is adapted to model the threshold voltage (V T ) instability and p-GaN gate leakage. Because of the lack of GaN pFETs, the source follower topology is often implemented in GaN ICs, suffering from an instable V T drop from rail to gate. With the adapted model, the simulation successfully reproduced the evolution of the output waveforms of a monolithically integrated GaN driver circuit under switching stress. Moreover, the gate voltage redistribution of the power p-GaN gate HEMTs controlled by the integrated GaN driver is evidently proved to strongly depend on the gate leakage. If neglecting the V T shift and gate leakage, the design could induce some malfunction.

show abstract

Section: Gate Voltage Redistributionmentioning

confidence: 80%

Section: Adapted Mvsg Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

GaN power ICs design using the MIT virtual source GaNFET compact model with GateLeakage and V _T instability effect

You¹,

Li²,

Geens³

et al. 2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…These hypotheses were verified by simulating the extraction of the equivalent circuit for the external loop. In the simulation, MVSG-HV (MIT Virtual Source GaNFET-High Voltage) compact model [25,26,27,28,29] was used as the GaN-HEMT model [30]. The parameters in MVSG-HV were calibrated based on experimental characterization results of discrete GaN-HEMTs fabricated by Interuniversity Microelectronics Centre, Belgium (Table III).…”

Section: Measurement Setupsmentioning

confidence: 99%

Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process

Yamashita

Stoffels

Posthuma

et al. 2019

IEICE Electron. Express

View full text Add to dashboard Cite

Reducing parasitic coupling components can improve switching performance in electric circuits. A two-stage gate driver and power Gallium Nitride High Electron Mobility Transistors (GaN HEMT) were monolithically integrated for MHz-switching. The monolithic integration improves switching performance owing to minimized parasitic inductance. The proposed GaN-IC was fabricated using an enhancement-mode GaNon-Insulator process technology. Experimental results showed that the GaN-IC had faster transition and less energy loss than a conventional circuit using a discrete gate driver. The proposed GaN-IC reduced switching time by 86% at turn-off and by 45% at turn-on under off-state V DS of 100 V and on-state I D of 10 A.

show abstract

An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs With p-GaN Gate

Shi,

Lei,

Wang

2024

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors

Cited by 3 publications

References 3 publications

GaN power ICs design using the MIT virtual source GaNFET compact model with GateLeakage and V _T instability effect

GaN power ICs design using the MIT virtual source GaNFET compact model with GateLeakage and V _T instability effect

Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process

An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs With p-GaN Gate

Contact Info

Product

Resources

About

Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors

Cited by 3 publications

References 3 publications

GaN power ICs design using the MIT virtual source GaNFET compact model with GateLeakage and V T instability effect

GaN power ICs design using the MIT virtual source GaNFET compact model with GateLeakage and V T instability effect

Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process

An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs With p-GaN Gate

Contact Info

Product

Resources

About

GaN power ICs design using the MIT virtual source GaNFET compact model with GateLeakage and V _T instability effect

GaN power ICs design using the MIT virtual source GaNFET compact model with GateLeakage and V _T instability effect