Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process

Abstract

Reducing parasitic coupling components can improve switching performance in electric circuits. A two-stage gate driver and power Gallium Nitride High Electron Mobility Transistors (GaN HEMT) were monolithically integrated for MHz-switching. The monolithic integration improves switching performance owing to minimized parasitic inductance. The proposed GaN-IC was fabricated using an enhancement-mode GaNon-Insulator process technology. Experimental results showed that the GaN-IC had faster transition and less energy loss than a conventional circuit using a discrete gate driver. The proposed GaN-IC reduced switching time by 86% at turn-off and by 45% at turn-on under off-state V DS of 100 V and on-state I D of 10 A.

An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply

“…This method offers smalller circuit area and superior switching performance compared to conventional discrete driving methods due to the reduction of parasitic inductance. Therefore, it is expected to be a promising candidate and also the related works have been reported the same in [28,29,30]. However, there are still few papers that take into account the problems of GaN HEMTs.…”

An ultra‐fast protection scheme for normally‐on wide bandgap devices

“…Lateral GaN high electron mobility transistors (HEMTs) are inherent d-mode devices. To enable the normally-off operation, several approaches have been developed, which include recessed-gate, Fluorine implantation and p-GaN gate [5][6][7][8][9][10][11]. Moreover, the cascode structure which consists of one low-voltage Si MOSFET and one high-voltage GaN HEMT has been proposed as a compromised option to achieve normally-off operation [12][13][14].…”

“…Lateral GaN high electron mobility transistors (HEMTs) are inherent d-mode devices. To enable the normally-off operation, several approaches have been developed, which include recessed-gate, Fluorine implantation and p-GaN gate [5][6][7][8][9][10][11]. Moreover, the cascode structure which consists of one low-voltage Si MOSFET and one high-voltage GaNThis is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.…”