Monolithic Two-Terminal III–V//Si Triple-Junction Solar Cells With 30.2% Efficiency Under 1-Sun AM1.5g

Cariou, Romain; Benick, Jan; Beutel, Paul; Razek, Nasser; Flötgen, Christoph; Hermle, Martin; David, Laurent; Glunz, Stefan W.; Bett, Andreas W.; Wimplinger, Markus; Dimroth, Frank

doi:10.1109/jphotov.2016.2629840

Cited by 107 publications

(63 citation statements)

References 24 publications

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“…Using SAB, dissimilar semiconductor substrates with different lattice constants and thermal expansion coefficients can be directly bonded to each other without heating. Previously, SAB-based InGaP=Si, 12) GaN=Si, 13) and InGaP=GaAs= Si 14,15) multijunction solar cells were reported by the present authors.…”

Section: Introductionmentioning

confidence: 59%

Electrical properties of GaAs//indium tin oxide/Si junctions for III–V-on-Si hybrid multijunction cells

Hara¹,

Ogawa²,

Liang³

et al. 2018

Jpn. J. Appl. Phys.

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The electrical properties of GaAs//indium tin oxide (ITO)/Si junctions fabricated by surface-activated bonding (SAB) are investigated with emphasis on their dependence on the temperature of postbonding annealing. The current-voltage (I-V) characteristics of n + -GaAs//ITO/p + -Si and n + -GaAs//ITO/n + -Si junctions without annealing are linear. Those of p + -GaAs//ITO/p + -Si and p + -GaAs//ITO/n + -Si junctions without annealing are nonlinear. Although the interface resistance of all the junctions increases with increasing annealing temperature, the resistances of the respective junctions after the annealing at 400°C are still smaller than the series resistance of the actual SAB-based InGaP/GaAs//Si hybrid triple-junction cells (>4 Ω cm 2 ). The n + -GaAs//ITO/n + -Si junction reveals the lowest resistance among the investigated junctions after annealing. These results demonstrate that GaAs//ITO/Si junctions with an ITO intermediate layer could be effective for reducing series resistance in hybrid multijunction cells.

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Section: Introductionmentioning

confidence: 59%

Electrical properties of GaAs//indium tin oxide/Si junctions for III–V-on-Si hybrid multijunction cells

Hara¹,

Ogawa²,

Liang³

et al. 2018

Jpn. J. Appl. Phys.

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“…Another possibility for improving upon the efficiency of single-junction silicon solar cells is that of III-V/silicon multijunctions. Recently, a III-V/Si triple-junction solar cell with 30.2% efficiency has been fabricated by means of wafer bonding of two independently prepared c-Si and GaInP/Al x Ga 1Àx As solar cells [111]. The efficiency rises to 32.8% for mechanically stacked (independently operated) III-V/Si double junctions, and to 35.9% for triple junctions [112].…”

Section: Full Device Modelingmentioning

confidence: 99%

Silicon solar cells: toward the efficiency limits

Andreani

Bozzola

Kowalczewski

et al. 2018

Advances in Physics: X

269

211

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Photovoltaic (PV) conversion of solar energy starts to give an appreciable contribution to power generation in many countries, with more than 90% of the global PV market relying on solar cells based on crystalline silicon (c-Si). The current efficiency record of c-Si solar cells is 26.7%, against an intrinsic limit of~29%. Current research and production trends aim at increasing the efficiency, and reducing the cost, of industrial modules. In this paper, we review the main concepts and theoretical approaches that allow calculating the efficiency limits of c-Si solar cells as a function of silicon thickness. For a given material quality, the optimal thickness is determined by a trade-off between the competing needs of high optical absorption (requiring a thicker absorbing layer) and of efficient carrier collection (best achieved by a thin silicon layer). The efficiency limits can be calculated by solving the transport equations in the assumption of optimal (Lambertian) light trapping, which can be achieved by inserting proper photonic structures in the solar cell architecture. The effects of extrinsic (bulk and surface) recombinations on the conversion efficiency are discussed. We also show how the main conclusions and trends can be described using relatively simple analytic models. Prospects for overcoming the 29% limit by means of silicon/perovskite tandems are briefly discussed.

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“…Even though a 4 T connection, with the different subcells operated independently, presents less sensitivity to spectral variations and thus leads to an increase in the annual energy yield, two‐terminal (2 T) cells can be easily incorporated into a conventional flat‐plate module. In this regard, outstanding results have been recently reported by Cariou et al for a 2 T 3 J GaInP/GaAs//Si solar cell manufactured by Surface‐Activated direct wafer Bonding (SAB), showing 33.3% one‐sun power conversion efficiency …”

Section: Introductionmentioning

confidence: 99%

Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration

Veinberg‐Vidal

Vauche

Medjoubi

et al. 2019

Progress in Photovoltaics

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Monolithic two-terminal III-V on Si dual-junction solar cells, designed for low concentration applications, were fabricated by means of surface-activated direct wafer bonding. The III-V top cell is a heterojunction formed by an n-Ga 0.5 In 0.5 P emitter and a p-Al 0.2 Ga 0.8 As base. An efficiency of 21.1 ± 1.5% at one sun and 23.7 ± 1.7% at 10 suns is demonstrated, which to our knowledge is the best dual-junction twoterminal III-V on Si tandem cell efficiency reported to date under verified reference conditions. The I-V characterization of these 1-cm 2 tandem cells under concentration required the development of a new method using a single-source multiflash solar simulator and not perfectly matched component cells, also known as pseudoisotypes, formed by Si single-junction cells and optical filters. In addition, the spectrum of the pulsed solar simulator was measured using a high-speed CMOS spectrometer, allowing the calculation of the spectral mismatch correction factor. Merging these two techniques results in the hybrid corrected pseudo-isotype (HCPI) characterization method, which shows a fast and accurate performance with a simplified procedure based on a single-source solar simulator. Pseudo-isotypes are easily adaptable to new cell designs by simply using a different filter, hence allowing the characterization of new multijunction solar cell architectures.

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Monolithic Two-Terminal III–V//Si Triple-Junction Solar Cells With 30.2% Efficiency Under 1-Sun AM1.5g

Cited by 107 publications

References 24 publications

Electrical properties of GaAs//indium tin oxide/Si junctions for III–V-on-Si hybrid multijunction cells

Electrical properties of GaAs//indium tin oxide/Si junctions for III–V-on-Si hybrid multijunction cells

Silicon solar cells: toward the efficiency limits

Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration

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