Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz

Abstract

Abstract:We report the design, fabrication, and performance of monolithic, slot-antenna coupled Schottky-collector resonant tunnel diode (SRTD) oscillator arrays. A 64-element oscillator array oscillated at 650 GHz while a 16-element array produced 28 pt.W at 290 GHz. Introduction:Resonant tunnel diode (RTD) waveguide oscillators have been reported at frequencies as high as 712 GHz [1], well beyond the highest frequency transistor oscillators built to date [2]. Power levels achieved by discrete waveguide RTD oscillators are limited by constraints imposed on maximum device area for suppressing parasitic bias circuit oscillations [3]. Higher power levels can be obtained with monolithic RTD oscillators in which these constraints are eliminated by on-wafer bias stabilizers [4]. Power levels can then be further increased using quasi-optical array RTD oscillators [5]. Here, we report monolithic Schottky-collector RTD (SRTD) oscillator arrays with on-wafer Schottkydiode bias stabilizers. Different circuits operated at frequencies ranging from 100 GHz to 650 GHz. A 64-element array oscillated at 650 GHz. To our knowledge this is the highest oscillation frequency achieved by a monolithic oscillator. Additionally, a 16-element array produced 28 p,W at 290 GHz.

Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators

“…[4][5][6][7] Operating frequency of oscillators with electron devices has also been rapidly increasing from the millimeter wave side. [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] Among the electron devices, resonant tunneling diodes (RTDs) have been considered as one of the candidates for compact THz oscillators at room temperature. [16][17][18][19][20][21][22][23] Oscillations up to 1.98 THz 23 and relatively high output power in the sub-THz region 24 have been reported for these oscillators.…”

Terahertz oscillation of resonant tunneling diodes with deep and thin quantum wells

“…On the electron device side, oscillators with heterostructure bipolar transistors (HBTs), high electron mobility transistors (HEMTs), and Si CMOS transistors are being studied intensively as THz sources [9,10,11,12]. Resonant tunneling diodes (RTDs) are also a good candidate [13,14,15]. High-frequency and high-power oscillation has been achieved at room temperature [16,17,18,19,20,21].…”

Propagation of Dark Solitary Waves in the Korteveg-Devries-Burgers Equation Describing the Nonlinear RLC Transmission

“…The NLTLs provide a useful way to check how the nonlinear excitations behave inside the nonlinear medium and to model the exotic properties of new systems [3]. Depending on device technology and design, NLTLs can easily be fabricated and integrated with resonant tunneling diodes (RTDs) using InP technology [4] [5]. Let us also point out that, recently, NLTLs have proven to be of great practical use in extremely wideband (frequencies from dc to 100 GHz) focusing and shaping of signals [6] which is usually a hard problem.…”