Monolithic integration of SEEDs and VLSI GaAs circuits by epitaxy on electronics

Abstract

Abstract-Using the epitaxy-on-electronics (EoE) process, selfelectrooptic effect devices (SEED's) have been monolithically integrated with VLSI GaAs electronics. The EoE approach provides both depletion-mode and enhancement-mode MESFET's for large-scale, high-density optoelectronic circuits. The performance of SEED's grown by molecular beam epitaxy at a reduced temperature compatible with the EoE process is shown to be robust, and modulators with contrast ratios of 2.3:l at 7.5-V bias have been integrated on commercially processed VLSI GaAs circuits. The EoE-SEED process offers potential improvements over the FET-SEED process, facilitating the applications of SEED's in free-space optical switching and computing.t -- quantum well, and EFET is enhancement-mode E T .

Epitaxy-on-Electronics technology for monolithic optoelectronic integration: foundations, development, and status

“…Work on EoE began [1][2][3][4][5][6][7][8][9][10][11][12][13][14] at the Massachusetts Institute of Technology ͑MIT͒ in 1990. Initial results included the fabrication of LED-based neural-network optoelectronic integrated circuits 4 ͑OEICs͒ as well as the integration of resonant tunneling diodes 7 ͑RTDs͒ and surface-normal multiple-quantum-well modulators 8 ͓also known as selfelectro-optic devices ͑SEEDs͔͒. The performance of this early work was limited by a number of process shortcomings that recent innovations have overcome.…”