Monolithic integration of photonic and electronic circuits in a CMOS process

Mekis, Attila; Abdalla, Sherif; Analui, B.; Gloeckner, S.; Guckenberger, Andrew; Koumans, R.G.M.P.; Kucharski, D.; Liang, Yi; Masini, G.; Mirsaidi, Sina; Narasimha, A.; Pinguet, Thierry; Sadagopan, V.; Welch, B.; White, J.; Witzens, Jeremy

doi:10.1117/12.766815

Cited by 17 publications

(10 citation statements)

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“…With serial 25 Gbps Infiniband EDR systems already in production, optical interconnects have become an essential technology enabling the scaling of data centers. Maturing Silicon Photonics (SiP) technology allowing mass production of planar integrated photonics at a competitive cost due to the utilization of existing CMOS infrastructure [3] and enabling high integration of optical devices such as modulators [4] and photodetectors [5] at the waferscale is expected to be particularly competitive to service an emerging need for extended reach single-mode high-speed data center interconnects in the 500 m-2 km range [6].…”

Section: Introductionmentioning

confidence: 99%

Advances in silicon photonics segmented electrode Mach-Zehnder modulators and peaking enhanced resonant devices

et al. 2014

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We report recent progress made in our laboratory on travelling wave Mach-Zehnder Interferometer based Silicon Photonics modulators with segmented transmission lines, as well as on resonant ring modulators and add-drop multiplexers with peaking enhanced bandwidth extended beyond the photon lifetime limit. In our segmented transmission lines, microstructuring of the electrodes results in radio-frequency modes significantly deviating from the transverse electromagnetic (TEM) condition and allows for additional design freedom to jointly achieve phase matching, impedance matching and minimizing resistive losses. This technique was found to be particularly useful to achieve the aforementioned objectives in simple back-end processes with one or two metallization layers. Peaking results from intrinsic time dynamics in ring resonator based modulators and add-drop multiplexers and allows extending the bandwidth of the devices beyond the limit predicted from the photon lifetime. Simple closed form expressions allow incorporating peaking into system level modeling.

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Section: Introductionmentioning

confidence: 99%

Advances in silicon photonics segmented electrode Mach-Zehnder modulators and peaking enhanced resonant devices

et al. 2014

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“…[1][2][3][4][5][6][7][8] Moreover, tremendous demands for high-performance, multifuntionality integrated systems require heterogeneous integrations of various functional blocks involving CMOS, MEMS, and photonic circuits owing to its multifunctionality, high-speed communication, and low power consumption. [9][10][11][12][13][14][15][16] 3-D heterogeneous integration can create new multifunctional convergence systems beyond electrical products such as mobile & consumer, networking, and computing. One of innovative potential applications is Internet of Things (IoT).…”

Section: Introductionmentioning

confidence: 99%

3-D Hetero-Integration Technologies for Multifunctional Convergence Systems

Lee¹

2015

Journal of the Microelectronics and Packaging Society

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Since CMOS device scaling has stalled, three-dimensional (3-D) integration allows extending Moore`s law to ever high density, higher functionality, higher performance, and more diversed materials and devices to be integrated with lower cost. 3-D integration has many benefits such as increased multi-functionality, increased performance, increased data bandwidth, reduced power, small form factor, reduced packaging volume, because it vertically stacks multiple materials, technologies, and functional components such as processor, memory, sensors, logic, analog, and power ICs into one stacked chip. Anticipated applications start with memory, handheld devices, and high-performance computers and especially extend to multifunctional convengence systems such as cloud networking for internet of things, exascale computing for big data server, electrical vehicle system for future automotive, radioactivity safety system, energy harvesting system and, wireless implantable medical system by flexible heterogeneous integrations involving CMOS, MEMS, sensors and photonic circuits. However, heterogeneous integration of different functional devices has many technical challenges owing to various types of size, thickness, and substrate of different functional devices, because they were fabricated by different technologies. This paper describes new 3-D heterogeneous integration technologies of chip self-assembling stacking and 3-D heterogeneous opto-electronics integration, backside TSV fabrication developed by Tohoku University for multifunctional convergence systems. The paper introduce a high speed sensing, highly parallel processing image sensor system comprising a 3-D stacked image sensor with extremely fast signal sensing and processing speed and a 3-D stacked microprocessor with a self-test and self-repair function for autonomous driving assist fabricated by 3-D heterogeneous integration technologies.

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“…On the other hand, electronic design automation (EDA) tools support large-scale circuit design, but do not natively support photonics: As the electromagnetic time scale in photonics is much shorter than in electronics, design is often performed in the frequency domain; but the concepts of optical power, phase and wavelength are not easily transferred to electrical simulators, which often rely on Kirchhoff's laws. Still, the first photonic toolkits based on EDA environments haven been demonstrated, with a limited support of photonic concepts (e.g a few wavelengths) [1]. Also, some photonic simulators already interface to EDA tools, such as RSoft's OptSim.…”

Section: Introductionmentioning

confidence: 99%