Monolithic integration of laser and passive elements using selective QW disordering by RTA with SiO/sub 2/ caps of different thicknesses

Performance improvement of InGaAs quantum well distributed Bragg reflector laser with curved grating

“…In order to obtain a high SMSR with a high injection current, use of Au-Sn solder and junction down mounting are needed for efficient cooling. (In a similar laser with a third-order curved DBR reported earlier [10], the SMSR was 20 dB when disordering of the quantum well in the DBR region was not applied, and it was 40 dB if disordering was applied. In the disordered laser, the DBR reflectivity was 70%, η d = 0.51, the current was 105 mA, and the maximum output was 60 mW.…”

“…2) grown up to the contact layer on a GaAs substrate. First, the quantum well in the DBR region and the window region were selectively disordered by rapid thermal annealing (RTA) using SiO 2 caps of different thicknesses [8,10]. In the disordering region and the region in which disordering was suppressed, SiO 2 films with thicknesses of 300 and 30 nm, respectively, were deposited by the PCVD method.…”

Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing

“…Similar inte grated laser structures have been dem onstrated previously in InP based inte grated devices. For example, a distrib uted Bragg reflector laser with QW disor dering in the grating area [4], was fabri cated with the use of impurity free va cancy disordering (IFVD) technique [5].…”

“…For gain and phase section we used Ti02 capping layer to prevent thermal interdif fusion. Ti02 is known to supress intermix ing [4,6] due to its larger thermal expan sion coefficient than the GaAs cap layer on which it is deposited. During anneal ing, thermal expansion coefficient mis match results in tensile strain in the quan tum weil structure and prevents vacancy diffusion, and thus effectively suppresses interdiffusion.…”

Fabrication and characterization of VCSELs applying quantum well intermixing using spin‐on‐glass

“…The QWI is performed by several methods of the impurity free vacancy disordering (IFVD) [5][6][7][8][9][10], the damage formation by ion implant [11], and the impurity induced disordering (IID) [12]. These technologies have been used as a window structure of high power lasers, integration of photonic devices, and multiwavelength lasers [13][14][15]. These applications control the light emission and the absorption wavelength of the QWI part.…”