In this work, we report the use of dielectric capping layer of Ti02 to se lectively suppress thermal interdiffusion of an InGaAs/GaAs quantum weil laser structure. Large differential wavelength shift of -25nm has been obtained across the same wafer between the uncapped and capped regions which is promising for achieving monolithic integration of multi-section semiconductor laser consist ing of a gain, a phase and a passive waveguide sections.
Abstract-Henry parameter, α H , is a key wavelength and carrier density dependent parameter which is central in determining the dynamic behavior of semiconductor lasers. While it may be extracted from below threshold measurements, its characteristics are of great interest above threshold where the lasers operate. We show that α H along with the lateral gain profile may be determined above threshold in stripe laser structures through recovery of the lateral near-field phase profile. The lateral phase profile of the wave-front at the facet is calculated using measured near-and far-field intensities of the laser based on a model under scalar Helmholtz equation formulation. It is shown that α H attains its maximum value under or in the proximity of the center of the pumped stripe. We apply the method to AlGaAs (λ = 776 nm) lasers with stripe widths ranging from 6-50 μm and with two levels of lateral current spreading achieved by having two different p-side cladding layer thicknesses. This permits comprehensive interpretation and analysis of the measured nearand far-field characteristics.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.