Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission

Zhao, Qian; Pan, Jiaoqing; Zhang, Jihong; Li, B.X.; Zhang, Fan; Wang, B.J.; Wang, L.F.; Bian, Jing; Zhao, Lihua; Wang, Wei

doi:10.1016/j.optcom.2005.11.014

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“…However these devices either have undesirably high operating voltages or are temperature sensitive, requiring temperature stabilization which increases the overall power consumption [13][14][15]. Modulators based on compound III-V semiconductors are attractive as quantum-well (QW) and QD structures as they can achieve both high-performance lasing and efficient electroabsorption modulation by exploiting the quantumconfined Stark effect (QCSE) which has enabled modulators based on GaAs [16][17][18] or InP [19,20].…”

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confidence: 99%

Evaluation of InAs quantum dots on Si as optical modulator

Sandall¹,

Ng²,

David³

et al. 2013

Semicond. Sci. Technol.

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The potential of using InAs quantum dots, epitaxially grown on a Si substrate, as an optical modulator have been investigated. By exploiting the quantum-confined Stark effect across the quantum dot layers we were able to increase the absorption in the dot layers at a chosen wavelength. This resulted in the first demonstration of an extinction ratio of 5.1 dB at 1310 nm with a reverse bias of 20 V. Higher extinction ratios of 8.6 dB at 7 V and 21.6 dB at 20 V bias were observed at a wavelength of 1355 nm.

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