Evaluation of InAs quantum dots on Si as optical modulator

Abstract

The potential of using InAs quantum dots, epitaxially grown on a Si substrate, as an optical modulator have been investigated. By exploiting the quantum-confined Stark effect across the quantum dot layers we were able to increase the absorption in the dot layers at a chosen wavelength. This resulted in the first demonstration of an extinction ratio of 5.1 dB at 1310 nm with a reverse bias of 20 V. Higher extinction ratios of 8.6 dB at 7 V and 21.6 dB at 20 V bias were observed at a wavelength of 1355 nm.

Measurement of the quantum-confined Stark effect in $InAs/In(Ga)As$ quantum dots with p-doped quantum dot barriers

“…The 𝑄𝐶𝑆𝐸 is present in both 𝑄𝐷𝑠 and 𝑄𝑊 𝑠 [8][9][10][11][12][13][14][15][16]. One of the advantages of 𝑄𝐷𝑠 devices is that they are more resilient than 𝑄𝑊 devices when growing them over 𝑆𝑖 since the 𝑄𝑊 𝑠 are always affected by defects arising from the material lattice mismatch and different thermal expansion coefficients.…”

Temperature Dependent Behavior of the Optical Gain and Electroabsorption Modulation Properties of an InAs/GaAs Quantum Dot Epistructure

“…One of the most used effects in electroabsortion modulation is the quantum confined Stark effect (QCSE). The QCSE was studied in InAs quantum dots [5][6][7][8][9] and there are several modulator designs [10][11]. To the best of our knowledge, most of them were not optimized to maximize device performance, E.g.…”