The quantum confined Stark effect in InAs/InGaAs QDs using an undoped and p-modulation doped active region was investigated. Doping potentially offers more than a 3x increase in figure of merit modulator performance up to 100 °C.

In this work, the feasibility of a monolithically integrated laser and electroabsorption modulator based on the same active quantum dot epistructure is studied. The net modal gain and the absorption in the modulator were measured using the segmented contact method from 25 °C to 125 °C. The maximum of the net modal gain active region of the laser decreases from 10 cm-1 at 25°C to 3.9 cm-1 at 125 °C. The non-optimized maximum extinction ratio of the modulator, 4.1 dBmm-1 , is almost constant until 25 °C. The wavelength at which the net modal gain and the change in absorption are maximum, shift with temperature by 0.04 eV.

The effects of implementing Ge and Si buffer layers on the performance of Si-based InAs/GaAs quantum dot lasers have been investigated in this paper. The laser performance has been improved significantly by utilising group-IV buffer layers.

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a modeling routine has been developed to quantify the effects of p-modulation doping in the waveguide core region of InAs quantum dot (QD) devices. Utilizing one dimensional approximations, simulated outputs of reverse and forward devices are simulated providing insight into absorption and gain properties.