Monolithic GaP green-emitting LED matrix-addressable arrays

Keune, D. L.; Craford, M. G.; Groves, W. O.; Johnson, Alan D.

doi:10.1109/t-ed.1973.17793

Cited by 13 publications

(3 citation statements)

References 9 publications

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“…In order to reduce the cost of alphanumeric displays, i t is desirable to develoo olanar monolithic X-Y addressable ar- rays. Devices of this type have recently been reported by two groups of workers [78], [79]. Keune et al [78] have fabricated a monolithic GaP green-emitting X-Y addressable array using a truely planar monolithic process analogous to the technique used in the silicon integrated-circuit technology.…”

Section: Afipluatwnsmentioning

confidence: 99%

“…Typical I-V characteristics for GaP arrays[78]. Curve A-B shows the I-V characteristic of a single-matrix addressable emitter measured between pointa A and B inFig.…”

mentioning

confidence: 99%

“…Optical performance of a typical Gap isolated LED array[78]. The relative brightness is plotted as a function of position onthe array surface (viewed through the Gap substrate).…”

mentioning

confidence: 99%

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Vapor phase epitaxial materials for LED applications

Craford

Groves

1973

Proc. IEEE

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The growth and performance of vapor phase epitaxial W E ) III-V materials and devices for lightdtting diode (LED) and display applications are reviewed. Because of the commercial importance of the GaAsP ternary alloys and Gap, this paper is pri-The 111-V material systems with potential for LED apd Y mncerned with these materials. With the addition of nitrogen plications have recently been reviewed by Archer [ 9 ] . These fabricated using GaAsP and GaP. The W E materials growth tech-doping high-performance * yellow, anddevicesbe include the direct materials: GaAsl,P, (x

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Section: Afipluatwnsmentioning

confidence: 99%

“…Typical I-V characteristics for GaP arrays[78]. Curve A-B shows the I-V characteristic of a single-matrix addressable emitter measured between pointa A and B inFig.…”

mentioning

confidence: 99%