2018
DOI: 10.1109/jstqe.2017.2774205
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Monolithic Four-Channel (QUAD) Integrated Widely Tunable Transmitter in Indium Phosphide

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Cited by 8 publications
(6 citation statements)
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“…This is due to the nature of scaling parallel channels where the edge space increases linearly with channel count. The capacity density does vary among the chosen examples, where the device from [12] leads the metric due to the use of compact EAM modulators. This work exhibits the second largest capacity density value even though a low-complexity integration process is used.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…This is due to the nature of scaling parallel channels where the edge space increases linearly with channel count. The capacity density does vary among the chosen examples, where the device from [12] leads the metric due to the use of compact EAM modulators. This work exhibits the second largest capacity density value even though a low-complexity integration process is used.…”
Section: Discussionmentioning
confidence: 99%
“…The generic foundry model for photonic integration [8] has made the technology more accessible to everyone, resulting in open-access indium phosphide [9] and silicon material platforms [10]. Monolithic integration of laser arrays with modulators and passive components on indium phosphide is a mature and established technology that can realize largescale parallel transmitters on a single compact chip [11], [12] without the need for hybrid assembly with lasers, required for silicon photonics. Costs can be kept low through the generic foundry model where standardized processes are capable of producing high-capacity WDM transmitters [13].…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, it offers the benefit of low chirp, which is a limiting impairment in systems employing DMLs. In [225], the authors reported a transmitter based on the integration of four widely tunable EMLs on a InP substrate. Each generated beam passes through a semiconductor optical amplifier (SOA) and an external electro-absorption modulator at 10 Gbit/s in baseband operation [225].…”
Section: E Imwp-integrated Microwave Photonicsmentioning
confidence: 99%
“…Therefore, different photonics integrated technologies [9]- [15] have been proposed to empower the A-RoF MFH links for targeting an ultracompact, cost-and energy-efficient solution. These efforts focus on the active monolithically integrated multi-wavelength transmitter or reconfigurable modulator [16]- [20], and passive photonic integrated devices (e.g., hybrid wavelength selective switches) [21]- [22]. In [17], a reconfigurable WDM-passive optical network (WDM-PON) based on an 8-channel directly modulated laser (DML) module has been proposed to demonstrate a 10-Gbit/s data transmission.…”
Section: Introductionmentioning
confidence: 99%
“…Subsequently, the multi-wavelength transmitter monolithically integrated 8channel distributed feedback (DFB) laser is proposed for achieving an 81.04-Gbit/s throughput 5G new radio (NR) A-RoF system [19]. An InP-based monolithic 4-channel widely tunable transmitter integrated with the DFB laser, semiconductor optical amplifier (SOA), and electro-absorbing modulator (EAM) has been designed and fabricated to support 410-Gbit/s mobile fronthauling [20]. A silicon-photonics photonic true time delay device [21] based on optical ring resonators is proposed for beamforming in 5G analog MFH.…”
Section: Introductionmentioning
confidence: 99%