Monolithic fabrication of a planar Gunn diode and a pHEMT side-by-side

Papageorgiou, Vasileios; Khalid, A.; Steer, Matthew J.; Li, C.; Cumming, David R. S.

doi:10.1109/essderc.2013.6818831

Cited by 4 publications

(7 citation statements)

References 13 publications

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“…The spectrum analyser setup was used for the detection of the Gunn diode oscillations. Figure 12 illustrates the measured spectrum of the device presented above, one of the first oscillating devices implemented side-by-side with a pHEMT [10]. The power level generated by the diode was defined using a PM4 Erickson power meter, considering the loss introduced by the probe (-2.5 dB).…”

Section: B Results and Discussionmentioning

confidence: 99%

“…Figure 6. SEM image of the fabricated 2x12 μm -wide device with 1.5 μm drain-to-source separation and the cross section of the 70 nm -long T-gate (inset) [10]. .…”

Section: A Fabrication Proceduresmentioning

confidence: 99%

“…In this technique a compromise has been conducted since the layer structure was not designed for the implementation of Gunn diodes. The latter approach demonstrated the first successful implementation of both devices on the same substrate for the first time, as presented in [10]. A 70 nm T-gate technology was incorporated for the optimization of the DC and the small-signal characteristics of the transistor.…”

Section: Introductionmentioning

confidence: 99%

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Integration techniques of pHEMTs and planar Gunn diodes on GaAs substrates

Papageorgiou

Khalid

et al. 2014

Solid-State Electronics

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Section: B Results and Discussionmentioning

confidence: 99%

“…Figure 6. SEM image of the fabricated 2x12 μm -wide device with 1.5 μm drain-to-source separation and the cross section of the 70 nm -long T-gate (inset) [10]. .…”

Section: A Fabrication Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Integration techniques of pHEMTs and planar Gunn diodes on GaAs substrates

Papageorgiou

Khalid

et al. 2014

Solid-State Electronics

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“…The first lithographic step incorporates the pattern definition of the Ohmic contacts following the same procedure as presented in [11]. A metal alloy consisting of 14-nm Au/14-nm Ge/14-nm Au/11-nm Ni/70-nm Au was evaporated for the simultaneous formation of the Ohmic contacts for both devices.…”

Section: Fabrication Of the Devicesmentioning

confidence: 99%

“…However, the current density of the multichannel devices was increased by approximately five times in comparison with the singlechannel devices, indicating that not all the channels contribute to the oscillation. The implementation of planar Gunn diodes and pHEMTs on GaAs substrates side-by-side has been recently studied [11], demonstrating the potential for amplification of the diode signal using a transistor-based amplifier on the same IC. However, the low-power level of −40-dBm suggested that we either improved the layer structure or moved to an InP-based system.…”

Section: Introductionmentioning

confidence: 99%

Cofabrication of Planar Gunn Diode and HEMT on InP Substrate

Papageorgiou

Khalid

et al. 2014

IEEE Trans. Electron Devices

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We present the cofabrication of planar Gunn diodes and high-electron mobility transistors (HEMTs) on an indium phosphide substrate for the first time. Electron beam lithography has been used extensively for the complete fabrication procedure and a 70-nm T-gate technology was incorporated for the enhancement of the small-signal characteristics of the HEMT. Diodes with anode-to-cathode separation (L ac ) down to 1-and 120-µm width were shown to oscillate up to 204 GHz. The transistor presents a cutoff frequency ( f T ) of 220 GHz, with power gain up to 330 GHz ( f max ). The integration of the two devices creates the potential for the realization of high-power, high-frequency MMIC Gunn oscillators, circuits, and systems.Index Terms-Gunn diode, high-electron mobility transistor (HEMT), integration, mm-wave.

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The Development of Planar Gunn Diodes for the realisation of MMIC Oscillators

Papageorgiou¹,

Khalid²,

Li³

et al. 2013

1st Annual Active and Passive RF Devices Seminar

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This paper presents the development of planar Gunn diodes over the last few years for the implementation of millimetre-wave sources. The fabrication procedure incorporates electron beam lithography and the oscillation frequency is determined by the anode-to-cathode distance. The evolution of the material design for the maximisation of the maximum frequency of oscillation and the enhancement of the generated power is presented in this paper. The recent implementation of a planar Gunn diode with a high-electron mobility transistor on the same substrate is also described in this work.

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Monolithic fabrication of a planar Gunn diode and a pHEMT side-by-side

Cited by 4 publications

References 13 publications

Integration techniques of pHEMTs and planar Gunn diodes on GaAs substrates

Integration techniques of pHEMTs and planar Gunn diodes on GaAs substrates

Cofabrication of Planar Gunn Diode and HEMT on InP Substrate

The Development of Planar Gunn Diodes for the realisation of MMIC Oscillators

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