Monolithic <b>
                     <i>β</i>
                  </b>-Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs

Khandelwal, Vishal; Yuvaraja, Saravanan; garcia, glen isaac maciel; Wang, Chuanju; Lu, Yi; AlQatari, Feras; Li, Xiaohang

doi:10.1063/5.0143315

Cited by 6 publications

(2 citation statements)

References 31 publications

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“… 12 Although researchers have fabricated high-performance Ga 2 O 3 unipolar transistors, 13 it is challenging to realize CMOS ICs using Ga 2 O 3 alone due to major p-doping difficulties and significant challenges of integrating p- and n-channels monolithically on the same wafer. 14 In this work, p-NiO 15 is introduced to overcome this issue; wherein the n-channel (Ga 2 O 3 ) and p-channel (NiO), i.e., dual-material channels, are 3D-stacked to achieve heterogeneously integrated bilayer Ga 2 O 3 /NiO ambipolar transistors. The 3D-stacked ambipolar transistor approach possesses several advantages, such as a simpler fabrication process, reconfigurability, and device scaling opportunities compared with the unipolar ones.…”

Section: Introductionmentioning

confidence: 99%

Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga₂O₃/NiO Semiconductors

Yuvaraja,

Khandelwal,

Krishna

et al. 2024

ACS Appl. Mater. Interfaces

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Recent advancements in power electronics have been driven by Ga 2 O 3 -based ultrawide bandgap (UWBG) semiconductor devices, enabling efficient high-current switching. However, integrating Ga 2 O 3 power devices with essential silicon CMOS logic circuits for advanced control poses fabrication challenges. Researchers have introduced Ga 2 O 3 -based NMOS and pseudo-CMOS circuits for integration, but these circuits may either consume more power or increase the design complexity. Hence, this article proposes Ga 2 O 3 -based CMOS realized using heterogeneous 3D-stacked bilayer ambipolar transistors. These ambipolar transistors consist of HfO 2 /NiO/Ga 2 O 3 /NiO/HfO 2 heterostructures that are wrapped around by the Ti/Au gate electrode, resulting in record high electron and hole current on/off ratios of 10 9 and 10 7 . The threshold voltage, subthreshold swing, and current density measured from 100 ambipolar devices (across 5 batches) are around −7.99 ± 0.92 V (p-channel) and 7.81 ± 0.81 V (n-channel), 0.59 ± 0.07 V/dec (p-channel) and 0.61 ± 0.06 V/dec (n-channel), and 0.99 ± 0.26 mA/mm (p-channel) and 58.23 ± 12.99 mA/mm (n-channel), respectively. All the 100 ambipolar devices showed decent long-term stability over a period of 200 days, exhibiting reliable electrical performance. The threshold voltage shift (ΔV TH ) after negative bias stressing for a period of 3500 s is around 11.52 V (p-channel) and 10.21 V (nchannel), respectively. Notably, the n-channels exhibit ∼2 orders higher on/off ratio than the best Ga 2 O 3 unipolar transistors at 300 °C. Moreover, the polarities of ambipolar transistors are reconfigurable into p-or n-MOS, which are integrated to demonstrate CMOS inverter, NOR, and NAND logic gates. The switching periods from "0" to "1" and from "1" to "0" of NOR are 0.12 and 0.17 μs, and those of NAND are 0.16 and 0.13 μs. This work lays the foundation of oxide-semiconductor-based CMOS for future integrated electronics.

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Section: Introductionmentioning

confidence: 99%

Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga₂O₃/NiO Semiconductors

Yuvaraja,

Khandelwal,

Krishna

et al. 2024

ACS Appl. Mater. Interfaces

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“…Interestingly, many of these logic control circuitries can be realized using a combination of normally-ON and normally-OFF transistors. 31) Thus, the logic circuitry for controlling the β-Ga 2 O 3 power converters can be realized using a suitable connection of virgin/erased (normally-ON) β-Ga 2 O 3 flash memory device with a programmed (normally-OFF) β-Ga 2 O 3 flash memory device. Consequently, the power converters and their logic control circuitry can be monolithically integrated into a standalone β-Ga 2 O 3 substrate.…”

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confidence: 99%

Demonstration of β-Ga₂O₃ nonvolatile flash memory for oxide electronics

Khandelwal

Rajbhar

garcia

et al. 2023

Jpn. J. Appl. Phys.

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This report demonstrates an ultrawide bandgap β-Ga2O3 flash memory for the first time. The flash memory device realized on heteroepitaxial β-Ga2O3 film had TiN as the floating gate (FG) and Al2O3 as tunneling and gate oxides. A memory window of > 4 V was obtained between the programmed and erased states of the device. The memory states showed negligible degradation in threshold voltage (VTH) even after 5000 s, exhibiting excellent nonvolatility. Furthermore, the device showed a VTH of ~0.3 V after applying a 17 V programming voltage pulse, indicating the potential of electron trapping phenomenon in the FG to achieve enhancement-mode operation in β-Ga2O3 transistors for high-power and logic applications. This study would provide insights for future oxide electronics integrating β-Ga2O3 memory.

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Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors

Chettri,

Mainali,

Xiao

et al. 2024

Physica Status Solidi (b)

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Wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductors in n‐type metal–oxide–semiconductor (n‐MOS) integrated circuits (ICs) are increasingly being explored for their potential applications in the rapidly developing field of electronics. This review comprehensively examines the role of n‐MOS inverters underpinned by WBG and UWBG semiconductors and their application possibilities. It delves into various n‐MOS inverter topologies, including resistive, enhancement or diode‐load, depletion‐load, and pseudo‐complementary MOS inverter topologies. Each topology's operational principles, unique advantages, and potential performance are elucidated in detail. Finally, these topologies are simulated using the Advanced Design System software for a fair comparison between various topologies. The literature and simulation results show that the pseudo‐D topology has the best gain and improved noise margin. The review methodology involves an extensive exploration of WBG/UWBG n‐MOS inverters to advance the current understanding of WBG/UWBG n‐MOS‐based ICs.

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Monolithic β -Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs

Cited by 6 publications

References 31 publications

Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga₂O₃/NiO Semiconductors

Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga₂O₃/NiO Semiconductors

Demonstration of β-Ga₂O₃ nonvolatile flash memory for oxide electronics

Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors

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Monolithic β -Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs

Cited by 6 publications

References 31 publications

Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors

Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors

Demonstration of β-Ga2O3 nonvolatile flash memory for oxide electronics

Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors

Contact Info

Product

Resources

About

Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga₂O₃/NiO Semiconductors

Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga₂O₃/NiO Semiconductors

Demonstration of β-Ga₂O₃ nonvolatile flash memory for oxide electronics