Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors

Abstract

Wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductors in n‐type metal–oxide–semiconductor (n‐MOS) integrated circuits (ICs) are increasingly being explored for their potential applications in the rapidly developing field of electronics. This review comprehensively examines the role of n‐MOS inverters underpinned by WBG and UWBG semiconductors and their application possibilities. It delves into various n‐MOS inverter topologies, including resistive, enhancement or diode‐load, depletion‐load, and pseudo‐complementary MOS inverter topologies. Each topology's operational principles, unique advantages, and potential performance are elucidated in detail. Finally, these topologies are simulated using the Advanced Design System software for a fair comparison between various topologies. The literature and simulation results show that the pseudo‐D topology has the best gain and improved noise margin. The review methodology involves an extensive exploration of WBG/UWBG n‐MOS inverters to advance the current understanding of WBG/UWBG n‐MOS‐based ICs.