Monolithic active pixel sensor realized in SOI technology—concept and verification

Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors

“…The crucial interface between the high resistivity handle silicon and the SOI buried oxide has been characterised using both pixel diodes and circular geometry MOS transistors. Pixel diode breakdown voltages were typically greater than 100 V and average leakage current densities at 70 V were only 55 nA/cm 2 . MOS transistors subjected to 24 GeV proton irradiation showed an increased SOI buried oxide trapped charge of only 3.45 Â 10 11 cm À2 for a dose of 2.7 Mrad.…”

“…A monolithic active pixel detector based on silicon on insulator (SOI) material, which vertically integrates the read-out electronics and the sensor devices in one substrate, not only eliminates the hybridisation process, but also provides thinner devices suitable for inner layers of vertex detectors. in a low resistivity 'device' layer, both interconnected by vias through the insulating SOI buried oxide (BOX) [2]. Each ionising particle impinging on such a detector creates approximately 80 e-h pairs/lm of depleted Si.…”

CMOS Readout Circuit Integrated with Ionizing Radiation Detectors

“…This work can be considered as follow-up of previously performed research [1], [2]. In previous solutions based on modification of the ITE proprietary silicon process using the SOI substrates, detecting junctions were manufactured below the buried oxide (BOX) in some kind of crater etched through the device layer.…”

“…Figure 1 illustrates schematically detector cross-section in H035 process (on the right) and previous solution developed in ITE (on the left). This compact layout together with advantages of the new technology allows for more efficient read-out architecture than presented in [1]. …”

Prototypes of large-scale SOI monolithic active pixel sensors

“…The details of the small-area detectors characterization may be found in Ref. [2]. As an example, Fig.…”