Monolithic 2–20 GHz GaAs travelling-wave amplifier

Ayasli, Y.; Reynolds, L.D.; Vorhaus, J.L.; Hanes, L.K.

doi:10.1049/el:19820409

Cited by 33 publications

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“…It is very difficult to achieve both high linearity and good efficiency simultaneously over such a broad frequency band. The traveling wave distributed configuration methods, gain equalization techniques, or loss matching networks have been used for designing broadband amplifiers [1] but these techniques are very complicated and not very effective in terms of the achievable performances and the circuit sizes that can be realized. Therefore, miniaturization would give added advantages of greater portability and reduce overall costs.…”

Section: Introductionmentioning

confidence: 99%

A 5W ultra-broadband power amplifier using silicon LDMOSFETs

You

Lim

Cho

et al. 2009

2009 Asia Pacific Microwave Conference

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We present the design of a high-efficiency power amplifier using silicon LDMOSFETs for the ultra-broadband from 2 to 500MHz. To achieve both the high efficiency and the output power required, the bias condition for the class-AB operation has been applied. In addition, a push-pull structure and a negative feedback network have been adopted for the broadband operation which has been implemented using broadband coaxial transmission line transformers and a broadband high-Q RF choke inductor. It is shown from the experimental results presented that the implemented power amplifier exhibits an output power at the 1dB compression point (P1dB) of more than 5W, as well as having a power-added efficiency of more than 43% at P1dB over the entire operational frequency band from 2 to 500MHz. The results also show very flat power gain characteristics of 22 1.5dB from 2MHz to 500MHz.Index Terms -Broadband power amplifier, broadband impedance transformer, coaxial transmission line, broadband RF choke, ferrite core

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Section: Introductionmentioning

confidence: 99%

A 5W ultra-broadband power amplifier using silicon LDMOSFETs

You

Lim

Cho

et al. 2009

2009 Asia Pacific Microwave Conference

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“…The wide-band capability of distributed amplifiers or travelling wave amplifiers (TWA) are well known as distributed amplifiers have been extensively investigated and realized successfully for various applications using hybrid microwave integrated circuit (MIC) and monolithic microwave integrated circuit technologies (MMIC) [1,2]. They have dominated broadband amplifier design for the last two decades and provide an excellent method for realizing amplifiers for multioctave band applications.…”

Section: Introductionmentioning

confidence: 99%

Cascaded single-stage distributed amplifier using DPHEMT devices for multioctave performance

Virdee

2009

Analog Integr Circ Sig Process

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This paper describes a multioctave (2-18 GHz) distributed amplifier design using the concept of cascaded reactively terminated single-stage distributed amplifier (CRTSSDA) configuration for EW applications. The concept of CRTSSDA is demonstrated to provide broadband performance with high gain, reduced power consumption, circuit stability and superior power-added efficiency compared to conventional distributed amplifiers using the same number of active devices. The broadband amplifier employing three-CRTSSDA is designed and fabricated using three different DPHEMT devices in the three respective stages of the design to further enhance the amplifier's efficiency performance. The amplifier achieved an associated gain level above 26 dB with flatness of \± 0.5 dB, an average power-added efficiency in access of 27% at an output power of 25 dBm across 2-18 GHz with an efficiency peak of 30% at 12 GHz. The input and output VSWR of better than 2:1 was achieved. Furthermore, the CRTSSDA provides a cost-effective solution when compared to the conventional travelling wave amplifier as only half the number of active devices is used. Fabrication of the amplifier was carried out by using the conventional thin-film microwave integrated circuit technology. The CRTSSDA is also disposed to realization by monolithic circuit technology.

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“…It is very difficult to match very low impedance to 50 Ohms over broadband frequencies without substantial degradation in performance. Currently, the most popular technique to achieving ultra-broadband amplification is the traveling-wave amplifier approach [1][2][3][4]. Multiple devices are connected in a distributed configuration to simulate a 50-Ohm transmission line at all frequencies.…”

Section: Introductionmentioning

confidence: 99%

10W ultra-broadband power amplifier

Ezzeddine

Huang

2008

2008 IEEE MTT-S International Microwave Symposium Digest

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We report the design and performance of an ultra-broadband power amplifier. It achieves 10 Watts output power with 21dB ± 1.5dB gain from 20 MHz to 3000 MHz. At lower frequencies from 20 to 1000 MHz the output power is 15 Watts with 22% efficiency. To achieve this performance, we employ a new design concept to control the device impedance and the power combiner impedance to be naturally 50 Ohms, such that no impedance matching is needed. Also, we developed a broadband microwave balun as a push-pull power combiner, which doubles as an impedance transformer. We believe the combination of output power, bandwidth and efficiency is the best reported to date.Index Terms -Power amplifiers, power combiners, broadband amplifiers, broadband balun, HIFET amplifiers.

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Monolithic 2–20 GHz GaAs travelling-wave amplifier

Cited by 33 publications

References 0 publications

A 5W ultra-broadband power amplifier using silicon LDMOSFETs

A 5W ultra-broadband power amplifier using silicon LDMOSFETs

Cascaded single-stage distributed amplifier using DPHEMT devices for multioctave performance

10W ultra-broadband power amplifier

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