Monolayer–Trilayer Lateral Heterostructure Based Antimonene Field Effect Transistor: Better Contact and High On/Off Ratios

Abstract

Inspired by the unique character of the semiconductor‐to‐metal transition from monolayer to trilayer antimonene, we built a monolayer–trilayer lateral heterostructure based field effect transistor (FET). Low tunneling barrier and Schottky barrier are achieved with trilayer antimonene electrodes compared with promising two‐dimensional contact material graphene and metal aluminum. Device performance is calculated accurately using the density functional theory (DFT) and nonequilibrium Green's functions (NEGF). The on/off ratio is 4.87 × 108 with the gate length 10.0 nm. Even if the gate length decreases to 5.0 nm, the on/off ratio is still as high as 1.06 × 106. The lowest power supply voltage (Vdd = 0.76 V) at Vds = 0.6 V to switch “on” and “off” is very close to the requirement of 0.72 V. In addition, the on‐current can be enhanced by a factor of six and on/off ratio is simultaneously lifted up through hydrogen passivation, which offers a route to further optimize the device performance. Low off‐current and high on/off current ratio along with high air stability make the monolayer–trilayer lateral heterostructure based antimonene FET a potential candidate for future low power device applications.

Two-Dimensional Antimony Oxide

“…1,2 Over the past years an increasing number of 2D materials with vastly different properties have been discovered, often driven by the search for new physical and chemical properties. Group-15 elements, also known as pnictogens, are suitable to form monoelemental 2D layered materials, which are promising candidates for a variety of applications in the field of plasmonics, 3 and for sensing, 4 electronic, [5][6][7] and optoelectronic 8 devices. Antimony is one of these elements and can form layered structures called antimonene.…”

Two-Dimensional Pnictogen for Field-Effect Transistors

“…Similarly, the I on / I off ratio of monolayer-trilayer antimonene-based FET also can be boosted up to 4.87 × 10 8 with 10 nm channel length [105]. Recently, Chang et al proposed novel antimonene and arsenene tunneling FETs based on the lateral monolayer-multilayer heterostructure [106, 107].…”

Electronic Properties and Interlayer Interactions in Antimony Oxide Homo‐ and Heterobilayers

“…[1][2][3][4][5][6][7] Its electronic bandgap of about 2.4 eV [8][9][10][11] makes this material a great candidate for electronic and optoelectronic devices. [11][12][13][14][15][16] Additionally, antimonene has also proven to be well suited for catalysis, [1,17] as a material for energy storage, [18,19] and for sensing, [20] and biomedical applications such as cancer therapy. [21][22][23] Antimonene exhibits, in contrast to many other 2D materials, residual covalent interlayer bonds, which can have a high impact on the electronic properties of few-layer structures, resulting in a significant decrease of the electronic bandgap, with the inclusion of additional layers.…”