Monocrystalline Cd_0.2Zn_0.8Te solid solution obtained by self‐selecting vapour growth

Abstract

Cd 0.2 Zn 0.8 Te monocrystals with the sizes of about 15 mm have been produced by self-selecting vapour growth (SSVG). High degree of structural perfection of monocrystalline Cd 0.2 Zn 0.8 Te was achieved. Excellent compositional uniformity was observed as well. To our knowledge, no comparable results are reported for this solid solution.

Studies on morphological change and optical properties for various Zn concentrations in CdTe thin film prepared by stacked elemental layer method

“…The direct energy band of Cd 1−x Zn x Te (CdZnTe) ternary compounds can be continuously tuned from the CdTe energy gap (1.50 eV) to the ZnTe one (2.3 eV) by varying the Zn concentration. This could be achieved by diffusion of Zn into CdTe using various techniques and growth methods [9][10][11][12]. Alikhanian et al have reported the first experimental investigation of the solid-vapor equilibrium in the CdTe-ZnTe system at 525 • C and 505 • C over the whole composition range [13].…”

Sigmoid-growth curve of lattice-constant against annealing-temperature of Cd1−xZnxTe thin films and its structural, optical and morphological characteristics

“…Also, CdTe detectors reflect high leakage currents and polarization. CdZnTe (CZT) semiconductor crystals, formed by alloying CdTe with Zn [4][5][6][7], whereas have high bulk resistivity. This high resistivity is because of the large band gap of this ternary semiconductor.…”