Monitoring explosive crystallization phenomenon of amorphous silicon thin films during short pulse duration XeF excimer laser annealing using real-time optical diagnostic measurements

Liquid-phase explosive crystallization of electron-beam-evaporated a-Si films induced by flash lamp annealing

“…The crystallization of precursor amorphous silicon (a-Si) films through non-thermal equilibrium rapid annealing has attracted considerable attentions since it is capable of forming device-grade polycrystalline Si (poly-Si) films on low-cost substrates with poor thermal tolerance [1][2][3][4][5][6][7][8][9][10]. Pulse duration for the crystallization is significantly important in order to fully heat and crystallize precursor a-Si films and to suppress thermal damage onto entire glass substrates, especially when thick ( 41 mm) a-Si films are used as precursor films with the aim of solar cell application.…”

Explosive crystallization of amorphous silicon films by flash lamp annealing

“…This means lateral crystallization triggered by the heat corresponding to the enthalpy difference between two phases of material, released at the interface of the two phases. There have been a number of experimental reports concerning the EC using several types of pulse light sources such as Q-switched ruby lasers, [12][13][14][15][16][17][18] XeF excimer lasers, 19 frequency doubled or tripled Nd:YAG ͑yttrium aluminum garnet͒ lasers, [20][21][22][23] Nd-glass lasers, 24 and continuous-wave ͑cw͒ Ar ion lasers with scanning, [25][26][27] as well as many theoretical investigations. [28][29][30][31][32] Characteristic periodic surface structures with approximately 1 m pitch spacing have been observed in the poly-Si films formed by FLA, 8,9,33 which may be an indication of the onset of the EC triggered by FLA because similar structures have been observed in the materials crystallized through EC.…”

Effect of electric bias on the deposition behavior of silicon on flexible polyethylene terephthalate (PET) during hot-wire chemical vapor deposition

“…The mobility of polycrystalline silicon thin film was reported to be $210 cm 2 /V s [4], whereas that of hydrogenated amorphous silicon thin film was reported to be $1.3 cm 2 /V s [5]. Efforts to produce high-mobility polycrystalline silicon films on a low-cost glass substrate have been made extensively using such as excimer laser annealing [6,7], solid phase crystallization (SPC) [8], rapid thermal processing (RTP) [9], and metal induced lateral crystallization (MILC) [10]. However, these methods suffer from complex processing, which increases the production cost.…”