Momentum Transfer Implantation for Sidewall Doping of FinFET's

Effects of Plasma Irradiation in Arsenic Plasma Doping Using Overhang Test Structures

“…In the SRPD step under the condition with ion flux, accelerated ions and radicals containing arsenic atoms may impinge on the natural oxide, and arsenic atoms may diffuse through the natural oxide into the silicon by an ion-assisted mechanism such as the knock-on mechanism. 13,14) Then the arsenic atoms in silicon may be activated by the subsequent spike annealing at 1025 C. In contrast under the condition without ion flux, for example, at the fin sidewall beneath the OHM, only radicals may impinge on the natural oxide and arsenic atoms may not diffuse into the silicon. Figure 2(c) shows the SR profiles of path A and path B with the OHM.…”

“…c) Ion-assisted doping: accelerated ions may assist the conformally deposited radicals to diffuse inward from the fin surface through a mechanism such as the knock-on mechanism. 13,14) Ion-assisted doping may between isotropic and anisotropic depending on the plasma conditions and may bring about efficient doping of the fin sidewall.…”