Molybdenum Disulfide Nanosheet/Quantum Dot Dynamic Memristive Structure Driven by Photoinduced Phase Transition

Abstract

MoS2 2D nanosheets (NS) with intercalated 0D quantum dots (QDs) represent promising structures for creating low‐dimensional (LD) resistive memory devices. Nonvolatile memristors based 2D materials demonstrate low power consumption and ultrahigh density. Here, the observation of a photoinduced phase transition in the 2D NS/0D QDs MoS2 structure providing dynamic resistive memory is reported. The resistive switching of the MoS2 NS/QD structure is observed in an electric field and can be controlled through local QD excitations. Photoexcitation of the LD structure at different laser power densities leads to a reversible MoS2 2H‐1T phase transition and demonstrates the potential of the LD structure for implementing a new dynamic ultrafast photoresistive memory. The dynamic LD photomemristive structure is attractive for real‐time pattern recognition and photoconfiguration of artificial neural networks in a wide spectral range of sensitivity provided by QDs.

Recent Advances in Hybridization, Doping, and Functionalization of 2D Xenes

“…The emergence of graphene has aroused universal interest in 2D materials with unique properties and fascinating functionalities, enabling their great progress of applications in a wide range of area such as electronics, energy, sensors, physics and biomedicines, etc. [ 1–32 ] 2D materials can not only be isolated and thinned into single atomic thickness, and stack vertically or laterally forming heterostructures through van der Waals (vdWs) forces, but also can be modified their electrical, optical, catalytic, and magnetic properties by doping and functionalization strategies like other nanomaterials. [ 33–40 ] In analog to graphene, the most related class of 2D materials is the emerging monoelemental 2D materials named Xenes, which borrow the etymology from similar sp 2 hybridized bonds and the honeycomb‐like atomic structure.…”

Hardware Implementation of Neuromorphic Computing Using Large‐Scale Memristor Crossbar Arrays

“…For instance, MoS 2 shows semiconducting properties in the 2H phase with a triangular prism structure and becomes metallic when it is transformed into a 1T (1T′) phase with a twisted octahedral structure. [ 26,70 ] The MoS 2 memristors have been developed by local 2H‐1T′ phase transitions via applying the electric field, [ 71 ] controlling the migration of Li + ions with an electric field, [ 26 ] or photo‐irradiation [ 72 ] . A MoTe 2 memristor is also explored by electrically driven 2H to 1T′ phase transformation.…”

Molybdenum Disulfide Quantum Dots: Properties, Synthesis, and Applications

“…It has previously been reported that the 2D crystals can be transformed from metallic to semiconducting phases via photoinduction with subpicosecond dynamics [169]. Fu et al demonstrated a reversible 2H-1T phase transition of a MoS 2 nanosheet/QD (2D/0D) structure controlled by photoexcitation of the QDs, and used the transition as a dynamic photoresistive memory device [170]. The QD and nanosheet dispersion was deposition between two graphene electrodes on a SiO 2 /Si chip.…”