Molecule-displacive ferroelectricity in organic supramolecular solids

Ye, Heng‐Yun; Zhang, Yi; Noro, Shin Ichiro; Kubo, Kazuya; Yoshitake, Masashi; Liu, Zunqi; Cai, Hu; Fu, Da‐Wei; Yoshikawa, Hideki; Awaga, Kunio; Xiong, Ren‐Gen; Nakamura, Takayoshi

doi:10.1038/srep02249

Cited by 50 publications

(31 citation statements)

References 30 publications

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“…Therefore, the ferroelectric origin is due to the alignment of the chiral cations. This ferroelectric mechanism is different from that of the known ferroelectrics containing homochiral molecules, including Rochelle salt44, the cocrystal of 1,4-diazabicyclo[2.2.2]octane N , N ′-dioxide L -tartrate25 and bis(imidazolium) L -tartrate26. In those ferroelectrics, the polarization reversal does not involve the reorientation of the homochiral L -tartrate acid because it has the intramolecular (pseudo) two-fold rotation axis.…”

Section: Discussionmentioning

confidence: 81%

Anomalously rotary polarization discovered in homochiral organic ferroelectrics

et al. 2016

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Molecular ferroelectrics are currently an active research topic in the field of ferroelectric materials. As complements or alternatives of conventional inorganic ferroelectrics, they have been designed to realize various novel properties, ranging from multiferroicity and semiconductive ferroelectricity to ferroelectric photovoltaics and ferroelectric luminescence. The stabilizing of ferroelectricity in various systems is owing to the flexible tailorability of the organic components. Here we describe the construction of optically active molecular ferroelectrics by introducing homochiral molecules as polar groups. We find that the ferroelectricity in (R)-(−)-3-hydroxlyquinuclidinium halides is due to the alignment of the homochiral molecules. We observe that both the specific optical rotation and rotatory direction change upon paraelectric-ferroelectric phase transitions, due to the existence of two origins from the molecular chirality and spatial arrangement, whose contributions vary upon the transitions. The optical rotation switching effect may find applications in electro-optical elements.

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Section: Discussionmentioning

confidence: 81%

Anomalously rotary polarization discovered in homochiral organic ferroelectrics

et al. 2016

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“…For nearly 100 y, homochiral ferroelectrics were basically multicomponent simple organic anime salts and metal coordination compounds, such as bis(imidazolium) L-tartrate and (R)-(-)-3-hydroxlyquinuclidinium halides (37)(38)(39), seignette salt (NaKC 4 H 4 O 6 ·4H 2 O) (22), (3-ammoniopyrrolidinium)NH 4 Br 3 , and (3-ammonioquinuclidinium)NH 4 Br 3 in our previous report (29). Single-component homochiral organic ferroelectric crystals are very rarely reported, although some single-component organic ferroelectrics without Curie temperature (T c ) were found (40).…”

Section: Significancementioning

confidence: 99%

Organic enantiomeric high- T _c ferroelectrics

Liao

Tang

et al. 2019

Proc. Natl. Acad. Sci. U.S.A.

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142

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For nearly 100 y, homochiral ferroelectrics were basically multicomponent simple organic amine salts and metal coordination compounds. Single-component homochiral organic ferroelectric crystals with high-Curie temperature (T c ) phase transition were very rarely reported, although the first ferroelectric Rochelle salt discovered in 1920 is a homochiral metal coordination compound. Here, we report a pair of single-component organic enantiomorphic ferroelectrics, (R)-3-quinuclidinol and (S)-3-quinuclidinol, as well as the racemic mixture (Rac)-3-quinuclidinol. The homochiral (R)-and (S)-3-quinuclidinol crystallize in the enantiomorphic-polar point group 6 (C 6 ) at room temperature, showing mirror-image relationships in vibrational circular dichroism spectra and crystal structure. Both enantiomers exhibit 622F6-type ferroelectric phase transition with as high as 400 K [above that of BaTiO 3 (T c = 381 K)], showing very similar ferroelectricity and related properties, including sharp step-like dielectric anomaly from 5 to 17, high saturation polarization (7 μC/cm 2 ), low coercive field (15 kV/cm), and identical ferroelectric domains. Their racemic mixture (Rac)-3-quinuclidinol, however, adopts a centrosymmetric point group 2/m (C 2h ), undergoing a nonferroelectric high-temperature phase transition. This finding reveals the enormous benefits of homochirality in designing high-T c ferroelectrics, and sheds light on exploring homochiral ferroelectrics with great application. ferroelectricity | homochirality | enantiomer | ferroelectric domains

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“…[113] However, the drawback can be attributed to the low spontaneous polarization and high gate leakage compared to their inorganic counterparts. The presence of some molecular-based ferroelectrics, [114][115][116] which gives high values of the spontaneous polarization, may be considered as a potential solution to this problem.…”

Section: Ferroelectric Random Access Memorymentioning

confidence: 99%

Physical principles and current status of emerging non-volatile solid state memories

Wang

Yang

Wen

2015

Electron. Mater. Lett.

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Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for the next generation of data-storage devices based on a comparison of their performance.

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Molecule-displacive ferroelectricity in organic supramolecular solids

Cited by 50 publications

References 30 publications

Anomalously rotary polarization discovered in homochiral organic ferroelectrics

Anomalously rotary polarization discovered in homochiral organic ferroelectrics

Organic enantiomeric high- T _c ferroelectrics

Physical principles and current status of emerging non-volatile solid state memories

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Molecule-displacive ferroelectricity in organic supramolecular solids

Cited by 50 publications

References 30 publications

Anomalously rotary polarization discovered in homochiral organic ferroelectrics

Anomalously rotary polarization discovered in homochiral organic ferroelectrics

Organic enantiomeric high- T c ferroelectrics

Physical principles and current status of emerging non-volatile solid state memories

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Organic enantiomeric high- T _c ferroelectrics