“…The charge transport of Au/FL-BP FETs has no reduction after annealing at 573 K for 3, 6, and 9 h, including the parameters of mobility (µ), the ON-OFF ratio, and the saturation current (I ds max ). The photodetection performance of Au/FL-BP FET displays no degradation of photocurrent (I ds ), rise time (τ rise ), decay time (τ decay ), S2 (Supporting Information), indicates that the high reliability of our EI&ED method for preparing scalable, harsh environment stable FL-BP crystals, [14,16,17,27,[38][39][40][41][42][43] promising the implementation of FL-BP based terminal devices industrialization.…”