Molecular n-type doping for air-stable electron transport in vacuum-processed n-channel organic transistors

Abstract

The effects of n-type doping on the air-stability of vacuum-processed n-channel organic transistors have been investigated using perylene diimides and pyronin B as the active layer and dopant, respectively. Systematic studies on the influence of doping location revealed the n-type doping of bulk active layer or channel region significantly improves air-stability by compensating for the trapped electrons with the donated mobile electrons. Although n-type doping at the electrode contact could readily turn on the devices, it could not confer air-stable electron transport. The described approach would open up opportunities to enable and improve the stability of n-channel organic transistors in air.

Toward a comprehensive understanding of molecular doping organic semiconductors (review)

“…Surprisingly, however, in contrast to inorganic semiconductors, doping also the channel of organic transistors still is more the exception than the rule and comparably few examples exist where molecularly doped channels were successfully employed in unipolar depletion-mode OFETs [90][91][92][93]. A typical setup for such a device is depicted in Figure 3c, where the authors employ …”

Efficient and Air‐Stable Mixed‐Cation Lead Mixed‐Halide Perovskite Solar Cells with n‐Doped Organic Electron Extraction Layers

“…[25][26][27] It has been reported that N-DBI doping can improve the air stability of n-channel organic field effect transistors. [25,28] 3-dimethyl-2-phenyl-2,3-dihydro-1H-benzoimidazole (N-DMBI) has also been used to n-dope phenyl-C 61 -butyric acid methyl ester in an inverted structure. [29] However, after film deposition, the dopant must be activated via overnight thermal annealing in an inert atmosphere after film deposition.…”

In‐situ Crosslinking and n‐Doping of Semiconducting Polymers and Their Application as Efficient Electron‐Transporting Materials in Inverted Polymer Solar Cells

“…Recently, the Bao group reported that OFET devices with N-DMBI doped PCBM [ 52 ] and pyronin B-doped perylene diimides [ 53 ] active layers show exceptional device stability in ambient conditions. Recently, the Bao group reported that OFET devices with N-DMBI doped PCBM [ 52 ] and pyronin B-doped perylene diimides [ 53 ] active layers show exceptional device stability in ambient conditions.…”