Molecular n-doping of chemical vapor deposition grown graphene

Singh, Arun Kumar; Iqbal, Muhammad Waqas; Singh, Vivek Kumar; Iqbal, Muhammad Zahir; Lee, Jae Hong; Chun, Seung‐Hyun; Shin, Keesam; Eom, Jonghwa

doi:10.1039/c2jm32716c

Cited by 64 publications

(54 citation statements)

References 35 publications

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“…It is already reported that the shift of the G and 2D peaks positions toward lower wavenumbers is attributed to n-type doping [34, 40, 44, 45], and the shift of the G and 2D peaks positions toward higher wavenumbers is attributed to p-type doping in graphene layers [46–48]. Figure 2(a) shows the Raman spectra of pristine and KNO 3 -doped SLG.…”

Section: Resultsmentioning

confidence: 92%

“…The mobility improvement was most dominant for SLG because the entire graphene layer is directly exposed to KNO 3 solution. This is a surprising result, since the doping treatments of graphene mostly have shown reduction of mobility [40, 45, 53, 54]. The mobility improvement may be due to the ionic screening of charged-impurities scattering [7].…”

Section: Resultsmentioning

confidence: 99%

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Improving the electrical properties of graphene layers by chemical doping

Khan

Iqbal

Eom

2014

Science and Technology of Advanced Materials

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Although the electronic properties of graphene layers can be modulated by various doping techniques, most of doping methods cost degradation of structural uniqueness or electrical mobility. It is matter of huge concern to develop a technique to improve the electrical properties of graphene while sustaining its superior properties. Here, we report the modification of electrical properties of single- bi- and trilayer graphene by chemical reaction with potassium nitrate (KNO3) solution. Raman spectroscopy and electrical transport measurements showed the n-doping effect of graphene by KNO3. The effect was most dominant in single layer graphene, and the mobility of single layer graphene was improved by the factor of more than 3. The chemical doping by using KNO3 provides a facile approach to improve the electrical properties of graphene layers sustaining their unique characteristics.

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Section: Resultsmentioning

confidence: 92%

Section: Resultsmentioning

confidence: 99%

Improving the electrical properties of graphene layers by chemical doping

Khan

Iqbal

Eom

2014

Science and Technology of Advanced Materials

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“…This type of chemical modification does not change the basic electronic structure and preserves the desired electronic properties of 2D nanomaterials by minimizing the damage to the lattice. In our previous reports, the electronic properties of exfoliated single-layer, bilayer and tri-layer graphene, as well as CVD-grown single-layer graphene, were tailored by PTSA molecular doping without degrading its transparency and electrical properties [30, 31]. …”

Section: Resultsmentioning

confidence: 99%

“…The sample was then placed in a vacuum desiccator for 1 d to completely dry. The procedure described in our previous papers was followed [30, 31]. …”

Section: Methodsmentioning

confidence: 99%

Chemical doping of MoS₂multilayer by p-toluene sulfonic acid

Andleeb

Singh

Eom

2015

Science and Technology of Advanced Materials

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We report the tailoring of the electrical properties of mechanically exfoliated multilayer (ML) molybdenum disulfide (MoS2) by chemical doping. Electrical charge transport and Raman spectroscopy measurements revealed that the p-toluene sulfonic acid (PTSA) imposes n-doping in ML MoS2. The shift of threshold voltage for ML MoS2 transistor was analyzed as a function of reaction time. The threshold voltage shifted toward more negative gate voltages with increasing reaction time, which indicates an n-type doping effect. The shift of the Raman peak positions was also analyzed as a function of reaction time. PTSA treatment improved the field-effect mobility by a factor of ~4 without degrading the electrical characteristics of MoS2 devices.

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“…Optical and electronic properties of graphene can be modulated by continuously tuning the charge carrier density using electrostatic gating123456, electrochemical doping7 or charge transfer by adsorption of molecular species891011121314151617181920212223. Besides electronic transport, the doping of graphene has a marked effect on the fundamental electron-phonon interactions, like the breakdown of the adiabatic Born-Oppenheimer approximation1234, the interplay between adiabatic and non-adiabatic effects23 or the interference between all the quantum pathways involved in inelastic light scattering5.…”

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confidence: 99%

Reversible optical doping of graphene

Tiberj

Rubio‐Roy

Paillet

et al. 2013

Sci Rep

101

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The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of graphene exfoliated on a SiO2/Si substrate can be finely and reversibly tuned between hole and electron doping with visible photons. This photo-induced doping happens under moderate laser power conditions but is significantly affected by the substrate cleaning method. In particular, it requires hydrophilic substrates and vanishes for suspended graphene. These findings suggest that optically gated graphene devices operating with a sub-second time scale can be envisioned and that Raman spectroscopy is not always as non-invasive as generally assumed.

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Molecular n-doping of chemical vapor deposition grown graphene

Cited by 64 publications

References 35 publications

Improving the electrical properties of graphene layers by chemical doping

Improving the electrical properties of graphene layers by chemical doping

Chemical doping of MoS₂multilayer by p-toluene sulfonic acid

Reversible optical doping of graphene

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Molecular n-doping of chemical vapor deposition grown graphene

Cited by 64 publications

References 35 publications

Improving the electrical properties of graphene layers by chemical doping

Improving the electrical properties of graphene layers by chemical doping

Chemical doping of MoS2multilayer by p-toluene sulfonic acid

Reversible optical doping of graphene

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Chemical doping of MoS₂multilayer by p-toluene sulfonic acid