Spintronics increases the functionality of information processing while seeking to overcome some of the limitations of conventional electronics. The spin-injected field effect transistor, a lateral semiconducting channel with two ferromagnetic electrodes, lies at the foundation of spintronics research. We demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure with empirically calibrated electrical injection and detection of ballistic spin-polarized electrons. We observed and fit to theory an oscillatory channel conductance as a function of monotonically increasing gate voltage.

Wearable electronics are emerging as a platform for next-generation, human-friendly, electronic devices. A new class of devices with various functionality and amenability for the human body is essential. These new conceptual devices are likely to be a set of various functional devices such as displays, sensors, batteries, etc., which have quite different working conditions, on or in the human body. In these aspects, electronic textiles seem to be a highly suitable possibility, due to the unique characteristics of textiles such as being light weight and flexible and their inherent warmth and the property to conform. Therefore, e-textiles have evolved into fiber-based electronic apparel or body attachable types in order to foster significant industrialization of the key components with adaptable formats. Although the advances are noteworthy, their electrical performance and device features are still unsatisfactory for consumer level e-textile systems. To solve these issues, innovative structural and material designs, and novel processing technologies have been introduced into e-textile systems. Recently reported and significantly developed functional materials and devices are summarized, including their enhanced optoelectrical and mechanical properties. Furthermore, the remaining challenges are discussed, and effective strategies to facilitate the full realization of e-textile systems are suggested.

An emerging electronic material as one of transition metal dichalcogenides (TMDCs), tungsten disulfide (WS2) can be exfoliated as an atomically thin layer and can compensate for the drawback of graphene originating from a gapless band structure. A direct bandgap, which is obtainable in single-layer WS2, is an attractive characteristic for developing optoelectronic devices, as well as field-effect transistors. However, its relatively low mobility and electrical characteristics susceptible to environments remain obstacles for the use of device materials. Here, we demonstrate remarkable improvement in the electrical characteristics of single-layer WS2 field-effect transistor (SL-WS2 FET) using chemical vapor deposition (CVD)-grown hexagonal BN (h-BN). SL-WS2 FET sandwiched between CVD-grown h-BN films shows unprecedented high mobility of 214 cm2/Vs at room temperature. The mobility of a SL-WS2 FET has been found to be 486 cm2/Vs at 5 K. The ON/OFF ratio of output current is ~107 at room temperature. Apart from an ideal substrate for WS2 FET, CVD-grown h-BN film also provides a protection layer against unwanted influence by gas environments. The h-BN/SL-WS2/h-BN sandwich structure offers a way to develop high-quality durable single-layer TMDCs electronic devices.

We report measurements of the thermopower S of mesoscopic Andreev interferometers, which are hybrid loops with one arm fabricated from a superconductor (Al), and one arm from a normal metal (Au). S depends on the phase of electrons in the interferometer, oscillating as a function of magnetic flux with a period of one flux quantum (= h/2e). The magnitude of S increases as the temperature T is lowered, reaching a maximum around T = 0.14 K, and decreases at lower temperatures. The symmetry of S oscillations with respect to magnetic flux depends on the topology of the sample.Comment: 4 pages, 4 figure