Molecular dynamics study of Cu deposition on Mo and the effects of low-energy ion irradiation

Bunnik, Bouke S.; Hoog, Carin de; Haddeman, Edwin F. C.; Thijsse, Barend J.

doi:10.1016/s0168-583x(01)00849-7

Cited by 10 publications

(6 citation statements)

References 7 publications

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“…This is consistent with molecular dynamics simulations of Cu deposited on Mo. 13 These simulations indicate that the first layer of Cu strongly bonds to the Mo, and the copper possesses an almost perfect bcc ͑110͒ Mo structure. 13 In our study, the 0.6 nm layer of Cu does not reveal clear fcc diffraction rings when examined via TEM.…”

Section: A Microstructuresupporting

confidence: 85%

“…13 These simulations indicate that the first layer of Cu strongly bonds to the Mo, and the copper possesses an almost perfect bcc ͑110͒ Mo structure. 13 In our study, the 0.6 nm layer of Cu does not reveal clear fcc diffraction rings when examined via TEM. The constraint from the Mo layer thereafter may assist in retaining the bcc atomic arrangement.…”

Section: A Microstructurementioning

confidence: 86%

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Microstructure and electronic properties of Cu/Mo multilayers and three-dimensional arrays of nanocrystalline Cu precipitates embedded in a Mo matrix

Zhang

Hundley

Malinowski

et al. 2004

Journal of Applied Physics

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Synthesis and characterization of metal-dielectric composites with copper nanoparticles embedded in a glass matrix: A multitechnique approach J. Appl. Phys. 98, 054301 (2005); Nanostructured Cu/Mo multilayers were prepared by magnetron sputtering. The thickness of the Cu layer was kept constant at 0.6 nm, while the thickness of the Mo layers varied from 2.5 to 20 nm for different specimens. The Cu layers exhibit a body centered cubic ͑bcc͒ structure and the interface between Cu and Mo remains sharp and planar in all specimens. Annealing of a Cu 0.6 nm/Mo 20 nm multilayer produced three-dimensional arrays of Cu nanoparticles lying along the previous interface. These Cu nanoparticles have an average particle size of roughly 2 nm with a bcc structure. Temperature-dependent resistivity measurements in as-deposited and annealed samples are reported. These data indicate that carrier scattering changes markedly as the system evolves from one that consists predominantly of planar interfaces to one dominated by spherical scattering centers.

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Section: A Microstructuresupporting

confidence: 85%

Section: A Microstructurementioning

confidence: 86%

Microstructure and electronic properties of Cu/Mo multilayers and three-dimensional arrays of nanocrystalline Cu precipitates embedded in a Mo matrix

Zhang

Hundley

Malinowski

et al. 2004

Journal of Applied Physics

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“…Additional evidence for this is found in results from molecular-dynamics simulation of Cu growth on Mo͑110͒. 22,23 Now we return to discussing the individual spectra in Fig. 3.…”

Section: B Effect Of Film Thicknessmentioning

confidence: 73%

Defects and morphological changes in nanothin Cu films on polycrystalline Mo analyzed by thermal helium desorption spectrometry

Venugopal

Seijbel

Thijsse

2005

Journal of Applied Physics

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Thermal helium desorption spectrometry ͑THDS͒ has been used for the investigation of defects and thermal stability of thin Cu films ͑5 -200 Å͒ deposited on a polycrystalline Mo substrate in ultrahigh vacuum. These films are metastable at room temperature. On heating, the films transform into islands, giving rise to a relatively broad peak in the helium desorption spectra. The temperature of this island formation is dependent on film thickness, being 417 K for 10 Å and 1100 K for a 200 Å film. The activation energy for island formation was found to be 0.3± 0.1 eV for 75 Å film. Grain boundaries have a strong effect on island formation. The defect concentration in the as-deposited films is ϳ5 ϫ 10 −4 , for films thicker than 50 Å and more for thinner films. Helium release from monovacancies was identified in the case of a 200 Å film. Helium release was also seen during sublimation of the Cu film ͑ϳ1350 K͒. Overlayer experiments were used to identify helium trapped close to the film surface. An increase of the substrate temperature during deposition resulted in a film that had already formed islands. Argon-ion assistance ͑250 eV͒ during film deposition with an ion/atom ratio of ϳ0.1 resulted in a significant enhancement of helium trapping in the films. The argon concentration in the films was found to be 10 −3 . The temperature of island formation was increased due to argon-ion assistance. The helium and argon desorption spectra are found to be similar, which is due to most of the helium becoming trapped in the defects created by the argon beam. The role of the Mo surface in affecting the defects at the film-substrate interface is investigated. The effect of variation of helium fluence and helium implantation energy is also considered. The present THDS results of Cu/poly-Mo are compared to those of Cu/ Mo͑100͒ and Cu/ Mo͑100͒ reported earlier.

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“…The absence of the S peak is observed when at the locations on the surface where the overlayer is sufficiently thick, the binding energy of helium in these defects has no longer the low, near-surface value. The relatively large overlayer thickness (30 Å) required to completely suppress the S peak may indicate a significant surface roughness of the base layer predicted by the MD simulations [15]. The L peak is seen in 50 and 100 Å spectra, at approximately the same temperatures as in the corresponding non-overlayer spectra, showing that a sufficient number of helium atoms released from the base layer are retrapped in the overlayer before the onset of island formation.…”

Section: Effect Of Overlayermentioning

confidence: 88%

“…This peak is attributed to breakup of large helium-vacancy complexes close to the film-substrate interface since this helium release occurs after the island formation (L peak) for film thicknesses 10 Å and before the desorption of the film. MD simulation study of 75 eV He implantation in Cu films grown on Mo(1 1 0) predicted the existence of large helium-vacancy clusters near the interface [15]. The shift of the P peak to higher temperatures with increasing thickness is explained in section 3.5.…”

Section: Effect Of Film Thickness Probed By 75 Ev He +mentioning

confidence: 94%

Defects of ultrathin Cu films on Mo(1 1 0) studied by thermal helium desorption spectrometry

Venugopal¹,

Thijsse²

2009

J. Phys. D: Appl. Phys.

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Defects of ultrathin Cu films (3-200 Å) deposited on Mo(1 1 0) at room temperature by e-beam evaporation in ultra-high vacuum are investigated using thermal helium desorption spectrometry. The samples are analysed with both 75 and 1000 eV He + implantation. Cu films transform into islands on annealing and the temperature of this transformation is strongly thickness dependent. Helium release from defects close to the surface of the Cu films (∼450 K), from monovacancies in as-deposited Cu film (50-200 Å), and from defects close to the interface (800-1050 K) are identified. Annealing of monovacancies is mainly responsible for reduction in helium trapping in a 20 Å Cu film prior to film islanding. There is an indication of retrapping of helium released from the first 5 Å layer of the film in the defects located in the overlayers (5-95 Å). Helium in the Cu films survives until the desorption temperature of the film (1200-1300 K).

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Molecular dynamics study of Cu deposition on Mo and the effects of low-energy ion irradiation

Cited by 10 publications

References 7 publications

Microstructure and electronic properties of Cu/Mo multilayers and three-dimensional arrays of nanocrystalline Cu precipitates embedded in a Mo matrix

Microstructure and electronic properties of Cu/Mo multilayers and three-dimensional arrays of nanocrystalline Cu precipitates embedded in a Mo matrix

Defects and morphological changes in nanothin Cu films on polycrystalline Mo analyzed by thermal helium desorption spectrometry

Defects of ultrathin Cu films on Mo(1 1 0) studied by thermal helium desorption spectrometry

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