Molecular dynamics simulation of the interfacial thermal resistance between phosphorene and silicon substrate

Zhang, Jingchao; Yang, Hong; Liu, Mengqi; Yue, Yanan; Xiong, Qingang; Lorenzini, Giulio

doi:10.1016/j.ijheatmasstransfer.2016.08.021

Cited by 90 publications

(53 citation statements)

References 52 publications

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“…Research into the effects of the cross‐bond stiffness at the interface between a metal and a semiconductor supported this conclusion and attributed the decrease in ITR with the interfacial stiffness to a greater probability of anharmonic phonon–phonon interactions at the interface. Moreover, a comparative study of the ITR with respect to the coupling strength χ at graphene–silicon, silicene–silicon, and phosphorene–silicon interfaces is shown in Figure . A decrease in the ITR is also found with larger coupling strength, which is attributed to the larger PDOS overlap as the coupling strength increases.…”

Section: Factors Influencing the Itrmentioning

confidence: 90%

“…The effect of high‐TC fillers, such as graphene and BN, in improving the heat dissipation performance of TIMs is obvious, and some materials with similar 2D structures, such as silicene, and phosphorene, and 1D nanostructures, such as CNTs, have also been proven to have good thermophysical characteristics, which is advantageous for practical applications. In addition, some metal particles or nanowires (e.g., Ag, Cu, Al, etc.)…”

Section: New Methods To Control and Reduce The Itrmentioning

confidence: 99%

Section: Factors Influencing the Itrmentioning

confidence: 99%

“…Therefore, more accurate effects of temperature on the ITR of various interfaces and over different temperature ranges were studied. The temperature dependence of the ITR at Al–SLG (single‐layer graphene), phosphorene–silicon, and graphene–silicon interfaces was investigated by simulation and experimental methods, and the results are shown in Figure a. With an increase in temperature, the ITR linearly decreases, which can be attributed to an increase in inelastic phonon scattering at the interface and a larger PDOS overlap.…”

Section: Factors Influencing the Itrmentioning

confidence: 99%

Section: Factors Influencing the Itrmentioning

confidence: 99%

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A Theoretical Review on Interfacial Thermal Transport at the Nanoscale

Zhang

Yuan

Xiong

et al. 2017

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106

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With the development of energy science and electronic technology, interfacial thermal transport has become a key issue for nanoelectronics, nanocomposites, energy transmission, and conservation, etc. The application of thermal interfacial materials and other physical methods can reliably improve the contact between joined surfaces and enhance interfacial thermal transport at the macroscale. With the growing importance of thermal management in micro/nanoscale devices, controlling and tuning the interfacial thermal resistance (ITR) at the nanoscale is an urgent task. This Review examines nanoscale interfacial thermal transport mainly from a theoretical perspective. Traditional theoretical models, multiscale models, and atomistic methodologies for predicting ITR are introduced. Based on the analysis and summary of the factors that influence ITR, new methods to control and reduce ITR at the nanoscale are described in detail. Furthermore, the challenges facing interfacial thermal management and the further progress required in this field are discussed.

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Section: Factors Influencing the Itrmentioning

confidence: 90%

Section: New Methods To Control and Reduce The Itrmentioning

confidence: 99%

Section: Factors Influencing the Itrmentioning

confidence: 99%

Section: Factors Influencing the Itrmentioning

confidence: 99%

Section: Factors Influencing the Itrmentioning

confidence: 99%

See 3 more Smart Citations

A Theoretical Review on Interfacial Thermal Transport at the Nanoscale

Zhang

Yuan

Xiong

et al. 2017

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106

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Interfacial Thermal Conductance between Mechanically Exfoliated Black Phosphorus and SiO_x: Effect of Thickness and Temperature

Wang

Yuan

et al. 2017

Adv Materials Inter

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Black phosphorus (BP) is one of new 2D materials that have attracted wide attention. This work reports the interfacial thermal conductance between BP flake and SiOx using Raman spectroscopy. From 293 K down to the 223 K, eight BP flakes in a thickness range of 16.6–113.7 nm are characterized. At 293 K, the largest interfacial thermal conductance is 1.14 × 108 W m−2 K−1 for a 82.1 nm thick BP flake, and the smallest one is 2.17 × 107 W m−2 K−1 for a 26.6 nm thick BP flake. Such large interfacial thermal conductance can be attributed to the excellent interface contact and strong phonon coupling between BP and SiOx. The measured interfacial thermal conductance has a one‐fold up to around four‐fold increase with decreased temperature from 293 to 223 K, which is a result of thermal‐expansion‐mismatch induced variation in the morphology of BP flakes. Additionally, it demonstrates no thickness‐dependent behavior. It is speculated the intrinsic thickness dependence is weak and is overshadowed by the large variation in the interface contact of different samples. As a new 2D material, BP shows great potential to be a thermal interface material for heat dissipation in electronics.

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Analytical Simulation of the Cloud Combustion of Corn Starch Microparticles

et al. 2019

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Knowledge of the fundamentals of dust combustion is necessary for designing safety technologies such as flame arrestors. The structure of flame propagation in a uniformly distributed cloud of volatile fuel particles was simulated. A model based on energy and mass conservation laws was generated. The obtained system of equations was nondimensionalized and solved according to the introduced boundary conditions. Comparison of the results with the existing experimental data in the literature showed remarkable agreement. Finally, the effect of parameters such as particle size and Lewis number on the characteristics of the cloud combustion of biomass microparticles under both lean and rich conditions was studied.

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Molecular dynamics simulation of the interfacial thermal resistance between phosphorene and silicon substrate

Cited by 90 publications

References 52 publications

A Theoretical Review on Interfacial Thermal Transport at the Nanoscale

A Theoretical Review on Interfacial Thermal Transport at the Nanoscale

Interfacial Thermal Conductance between Mechanically Exfoliated Black Phosphorus and SiO_x: Effect of Thickness and Temperature

Analytical Simulation of the Cloud Combustion of Corn Starch Microparticles

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Molecular dynamics simulation of the interfacial thermal resistance between phosphorene and silicon substrate

Cited by 90 publications

References 52 publications

A Theoretical Review on Interfacial Thermal Transport at the Nanoscale

A Theoretical Review on Interfacial Thermal Transport at the Nanoscale

Interfacial Thermal Conductance between Mechanically Exfoliated Black Phosphorus and SiOx: Effect of Thickness and Temperature

Analytical Simulation of the Cloud Combustion of Corn Starch Microparticles

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Interfacial Thermal Conductance between Mechanically Exfoliated Black Phosphorus and SiO_x: Effect of Thickness and Temperature