Molecular dynamics simulation of temperature effects on deposition of Cu film on Si by magnetron sputtering

Zhu, Guo; Sun, Jiangping; Zhang, Libin; Gan, Zhiyin

doi:10.1016/j.jcrysgro.2018.04.002

Cited by 27 publications

(15 citation statements)

References 40 publications

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“…The opposite result was observed in the case wherein the incident angle approaches high incidence (60°and 75°), it grows in a columnar or island-like mode and has rough surface [42]. In the MD simulation of copper thin film growth on silicon (001) surface, the influence of silicon substrate temperature on the structure formation in the deposited layer and atomic diffusion in the interface zone was studied [43].…”

Section: Introductionmentioning

confidence: 98%

“…In turn, the use of modern computer simulation techniques, in particular the molecular dynamics (MD) method, and interatomic interaction potentials having ever-growing accuracy in description of metal-semiconductor systems behavior, allows comprehensive studies of iron silicides formation. The molecular dynamics method has been successfully used to simulate the growth processes of various metal [36][37][38][39], semiconductor [40][41][42], and also metalsemiconductor films [43][44][45] where the influence of the substrate temperature, deposition angle, and surface orientation on the structural properties of the synthesized films were examined in detail. In particular, the MD simulation of the growth of a hydrogenated silicon film on Si (001) substrate were used for studying the influence of the incidence angle of the deposited atoms.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Iron silicides formation on Si (100) and (111) surfaces through theoretical modeling of sputtering and annealing

Чепкасов

Baidyshev

Sukhanova

et al. 2020

Applied Surface Science

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Iron silicides formation on Si (100) and (111) surfaces through theoretical modeling of sputtering and annealing

Чепкасов

Baidyshev

Sukhanova

et al. 2020

Applied Surface Science

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“…Нанесення металевої плівки на поверхню напівпровідників активно використовують для створення омічних контактів у приладах сучасної електроніки й оптоелектроніки зокрема. Нині основними методами нанесення контактної сітки є методи термічного випаровування, іонного розпилення та хімічного осадження з газової фази (парогазової суміші) [1][2][3].…”

Section: вступunclassified

“…Методом СРФЕ на поверхню кремнієвої пластини нанесено з Al-Sn розчину-розплаву контактний шар Al/SnAl, що має питомий контактний опір 7,2 • 10 -4 Ом • см 2 .…”

Section: висновкиunclassified

DEPOSITION OF Al/SnAl OHMIC CONTACT ON SILICON FROM A LIQUID PHASE

Tsybulenko¹,

Shutov²,

Boskin³

2021

KPI SN

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Background. Single- and multi-layer metal films are widely utilized in modern electronics and optoelectronics as ohmic contacts. As a rule, the films are deposited by thermal evaporation, ion sputtering and chemical vapour deposition. However the methods of deposition from a liquid phase are the most simple and cost-effective. Thus the ohmic contact deposition by these methods is still an actual problem. Objective. The purpose of the paper is to study the possibility of deposition of multi-layer ohmic metal films over a semiconductor wafer surface from a liquid phase, particularly by scanning liquid phase epitaxy technique. Methods. In this work we considered the influence of a long-term temperature gradient at the interface metallic solution-melt – semiconductor wafer on the possibility of deposition of multi-layer ohmic metal films on the semiconductor wafer surface during segmental contact between the solution-melt and the wafer. For this purpose we carried out the simulation of heat transport process, wafer wetting process as well as the process of wafer cleansing off the solution-melt taking into account capillary phenomena in the mask openings using the method of scanning liquid phase epitaxy. For experimental confirmation of adequacy of the model proposed we carried out the deposition of Al/SnAl layer on silicon wafer in the above mentioned conditions. Results. We have deposited the contact layer Al/SnAl on the surface of silicon wafer from Al-Sn solution-melt by scanning liquid phase epitaxy technique using supplementary heater for the wafer and mask installed in the apparatus. The contact layer is made as three identical pads located at different distance one from each other. By the analysis of current-voltage characteristic we determined that the metallic film contact with the semiconductor is a non-rectifying, i.e. ohmic contact. The specific contact resistance was determined by the Transmission Line Method using linear configuration of the contact pads (LTLM). Its value was 7.2∙10-4 Ohm·cm2. Conclusions. The principal possibility of obtaining of multi-layer ohmic contacts to the semiconductor by scanning liquid phase epitaxy technique in conditions of segmental contact between the solution-melt and the wafer as well as long-term gradient at the contact interface was shown. The conditions were realized by using extra heating of the wafer back side and the high-temperature mask through which the solution-melt contacted the wafer.

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“…37 After that, Zhu et al also studied the temperature effect and the interfacial stress distribution in the Cu incidence/Si substrate system. 38 On the other hand, Chen constructed a much larger model and focused on the effects of film thickness, deposition temperature, deposition interval, and reflow temperature on the surface roughness of Cu films. 39 40−43 The atom jumping behaviors on the substrate surface and the island coalescence progress are well described.…”

Section: Introductionmentioning

confidence: 99%

Transformation and Control of Crystal Structures on Electronic Thin Films

Chang,

Chen,

Chang

et al. 2024

Crystal Growth & Design

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The deposition of Ni film on the Si substrate is important due to its broad applications in electronics, especially at the nanoscale. In this study, we applied molecular dynamics simulations to perform a subatomic observation simultaneously during the process of sputtering Ni on crystalline Si, and a model according to the Thompson formula was developed to simulate the energy distribution of ejected atoms during sputtering. We found the critical parameters controlling interdiffusion behavior were substrate temperature and incident flux of Ni. The substrate temperature significantly leads the crystallinity of the Ni film, where they exhibit amorphous, FCC, and BCC structures at substrate temperatures below 400, 500−600, and beyond 700 K, respectively. The incident flux dominates the crystallinity of the deposited Ni film. Only amorphous Ni forms with 10 atom/ps flux, and fewer defects in the FCC Ni film were observed with 2.5 atom/ps flux. To balance the throughputs and film quality, an incident flux of 2.5 atom/ps is the optimized choice. The detailed understanding enables the control of thin films during electronic fabrication.

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Molecular dynamics simulation of temperature effects on deposition of Cu film on Si by magnetron sputtering

Cited by 27 publications

References 40 publications

Iron silicides formation on Si (100) and (111) surfaces through theoretical modeling of sputtering and annealing

Iron silicides formation on Si (100) and (111) surfaces through theoretical modeling of sputtering and annealing

DEPOSITION OF Al/SnAl OHMIC CONTACT ON SILICON FROM A LIQUID PHASE

Transformation and Control of Crystal Structures on Electronic Thin Films

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