Capabilities of light scattering effects for researches of structural properties of water are analysed. It is shown that measuring of indicatriсes of light scattering by water for different incident radiation intensities make it possible to determine degree of water polydispersity, along with dimensions and concentration of scattering centres. We provide information on how the ions contained or gases dissolved in the water, the temperature, structural phase transitions, mechanical influence, purification efficiency and the sources of water affect the characteristics of the scattering centres, thus facilitating some important conclusions about the structure of water clusters.
A simple method of E(g)(T) dependence determination for active areas of semiconductor devices based on wide bandgap semiconductors has been proposed and developed. Verification of the method has been carried out while determining E(g)(T) dependence in a base area of p(+)-n-type GaP diodes in the temperature range 77-523 K. The method is based on U-T characterization of the diodes and calculation of E(g)(T) dependence according to the expression obtained within present study. Satisfactory agreement between experimental and theoretical results has been achieved including references available on gallium phosphide. The method proposed could be applied to experimental data processing in high-temperature thermometry.
A new technique of liquid phase epitaxy has been proposed in this work. It allows to eliminate known disadvantages of liquid phase epitaxy by creating short-time contact between a substrate and a solution-melt, as well as due to segmental deposition of an epitaxial layer over the working substrate surface. The short-time of the contact is achieved by the means of Ampere force acting on the solution-melt. And the contact itself between the substrate and the solution-melt is realized pointwise (or segmentally) over the substrate surface using the scanning principle. The new technique was named “scanning liquid phase epitaxy”. One of the modifications of device realization of the technique proposed has been considered and its principle of operation has been described. Preliminary theoretical investigations and experimental processes of semiconductor epitaxial layers obtaining have proved principal operational capability of the new technique. The technique developed allows to obtain thin and ultrathin epitaxial layers on the substrates of very large area which is limited only by the growth equipment size.
We carried out the modelling of separate technological stages of scanning liquid phase epitaxy (SLPE) technique: wetting the substrate by the solution-melt using Ampere force, growing the epitaxial layer during a short-time contact between the substrate and solution-melt, and removing the solution-melt from the substrate using Ampere force as well. The modelling was carried out for the case of Ge layers growing on GaAs substrate from GaGe solution-melt at the temperature 500 °C. We have ascertained that the Peltier effect and Joule heating practically have no effect on the growth pattern and under certain conditions could be even diminished. The influence of electromigration and convection in the solution-melt can be neglected. It has been shown that the basic technological parameters of SLPE process are as follows: the initial temperatures and sizes of the substrate and the growing vessel, the conditions of heat removal from the substrate back side and the time of the process. It has been also shown that the major contribution into the epitaxial layer thickness distribution over the substrate surface has been made by the heat distribution in the cooled substrate.
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