Molecular dynamics simulation of ion bombardment on hydrogen terminated Si(001)2×1 surface

Satake, Koji; Graves, David B.

doi:10.1116/1.1554939

Cited by 16 publications

(2 citation statements)

References 53 publications

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“…In terms of simulation methods of plasma damage, molecular dynamics (MD) calculation [7][8][9][10][11] can microscopically predict the damage distribution. However, the MD calculation generally has a very limited range and has difficulty in simultaneously considering a time-dependent etched profile and physical damage on the 100 nm scale.…”

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confidence: 99%

Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO$_{2}$ over Si Substrate by Fluorocarbon Plasma

Kuboi¹,

Tatsumi²,

Kobayashi³

et al. 2012

Appl. Phys. Express

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We have demonstrated an InP/InGaAs composite-channel metal-oxide-semiconductor field-effect transistor with a selectively regrown n þ -InGaAs source/drain formed by metal organic vapor-phase epitaxy. A 150-nm-long channel was fabricated using a dummy gate and by laterally buried regrowth in the channel undercut. The gate stack was formed after regrowth by replacing the dummy gate. The carrier density of the regrown layer was 4:9 Â 10 19 cm À3 . The maximum drain current at a drain voltage V d ¼ 1 V and a gate voltage V g ¼ 3 V was 0.93 mA/m and the maximum transconductance was 0.53 mS/m at V d ¼ 0:65 V. #

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confidence: 99%

Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO$_{2}$ over Si Substrate by Fluorocarbon Plasma

Kuboi¹,

Tatsumi²,

Kobayashi³

et al. 2012

Appl. Phys. Express

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“…To understand the mechanism causing this variation and predict the process conditions for realizing good coverage and film properties, simulation technology is an useful tool. To date, on the micro scale (order of angstrom), molecular dynamics (MD) calculations [39][40][41][42][43][44][45][46][47][48][49][50][51][52][53] and first-principles calculations [54][55][56][57][58][59][60][61][62][63] have been studied for the etching and deposition processes of various films. In the case of SiN deposition films, Guo et al 53) investigated the kinetics of the early stage of a SiN deposition process via MD calculations of the 8 × 8 nm domain region with Lennard-Jones-type potentials.…”

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confidence: 99%

Modeling and simulation of coverage and film properties in deposition process on large-scale pattern using statistical ensemble method

Kuboi

Matsugai

Tatsumi

et al. 2023

Jpn. J. Appl. Phys.

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This study modeled deposition processes using statistical ensemble and feature scale voxel methods to predict the coverage and film properties on a large-scale pattern for the first time. Certain new concepts, such as the use of probabilities to express physical and chemical phenomena occurring on the surface, interaction among voxels, and super particles for fast calculations, were introduced. Further, the model was used to analyze the experimental characteristic variation between the morphology and film density of SiN in low-temperature plasma-enhanced chemical vapor deposition using a SiH4/NH3/N2 gas mixture with different SiH4 flow rates, which has not been found in SiO2 films. The simulation results demonstrated the effect of precursor mass in the gas phase on the surface migration and morphology formation. In addition, a short residence time was required to prevent generation of large and heavy precursors for realizing good SiN coverage and film properties at the low temperature.

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New approaches for the production of nano‐, micro‐, and polycrystalline silicon thin films

Cabarrocas

2004

phys. stat. sol. (c)

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We review current models and propose new approaches for the production of silicon thin films by low temperature plasma processes. Growth models have often been borrowed from those developed for hydrogenated amorphous silicon and are based on surface diffusion of SiH 3 . However, in situ growth studies have also pointed out the fast diffusion of hydrogen and its role in the crystallization of the film through subsurface reactions. Moreover, ions and silicon nanocrystals can also play a crucial role in microcrystalline silicon deposition. We show that ion bombardment is responsible for the formation of a disorderd subsurface layer while deposition on a cooled substrate allows us to trap the silicon nanocrystals and to prevent their growth, thus leading to nanocrystalline thin films. The deposition at 200 °C on substrates with a low density of surface defects allows for the surface mobility of the nanocrystals and their agglomeration to form large grains, thus resulting in polycrystalline silicon thin films.

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Molecular dynamics simulation of ion bombardment on hydrogen terminated Si(001)2×1 surface

Cited by 16 publications

References 53 publications

Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO$_{2}$ over Si Substrate by Fluorocarbon Plasma

Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO$_{2}$ over Si Substrate by Fluorocarbon Plasma

Modeling and simulation of coverage and film properties in deposition process on large-scale pattern using statistical ensemble method

New approaches for the production of nano‐, micro‐, and polycrystalline silicon thin films

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