Molecular-dynamics calculation of the thermal conductivity coefficient of the germanium single crystal

Selezenev, A. A.; Aleinikov, A. Yu.; Ermakov, P. V.; Ganchuk, N. S.; Ganchuk, S. N.; Jones, Reese E.

doi:10.1134/s1063783412030286

Cited by 8 publications

(3 citation statements)

References 10 publications

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“…The development of modern electronics is associated with the search and development of new materials or the improvement of the properties of the existing ones. At present, a semiconductor material such as germanium is a promising material for creating various electronic devices and sensors such as diodes, triodes, dosimeter devices, transducers, Hall sensors, detectors of infrared radiation [1,2]. Technologies of strained germanium find their practical use in nanosized transistor structures and nanophotonics [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of electron scattering in uniaxially deformed n-Ge⟨Sb, Au⟩ single crystals

Luniov¹,

Nazarchuk²,

Zimych³

et al. 2019

Condens. Matter Phys.

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Temperature dependencies for concentration and the Hall mobility of electrons for the n-Ge Sb and n-Ge Sb, Au single crystals uniaxially deformed along the crystallographic directions [100] and [111] are obtained on the basis of piezo-Hall effect measurements. A deformation-induced increase of the Hall mobility of electrons for n-Ge Sb, Au single crystals at the uniaxial pressure along the crystallographic direction [100] has been revealed. A comparison of the obtained experimental results with the corresponding theoretical calculations of temperature dependencies of the Hall mobility showed that the obtained effect occurs at the expense of the reduction probability of electron scattering on the fluctuational potential. Its amplitude depends on the temperature and on the value of the uniaxial pressure. It has also been shown that an increase of the Hall mobility for the n-Ge Sb, Au single crystals uniaxially deformed along the crystallographic direction [111] with an increasing temperature turns out to be insignificant and is observed only for the uniaxial pressures P < 0.28 GPa. A decrease of the Hall mobility of electrons at the expense of the deformational redistribution of electrons among the valleys of the germanium conduction band with different mobility should be taken into account in the present case. The Hall mobility magnitude for the uniaxially deformed n-Ge Sb single crystals is determined only by the mechanisms of phonon scattering and we have not observed the effect of the growth of the Hall mobility with an increase of temperature or the magnitude of uniaxial pressure. This demonstrates a secondary role of the fluctuational potential in the present case.

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Section: Introductionmentioning

confidence: 99%

Mechanisms of electron scattering in uniaxially deformed n-Ge⟨Sb, Au⟩ single crystals

Luniov¹,

Nazarchuk²,

Zimych³

et al. 2019

Condens. Matter Phys.

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“…Another method for calculating the thermal conductivity coefficient, used today, is a molecular dynamics simulation of the crystal lattice. In article [15] germanium single crystals are considered as containing both an ideal lattice and defects (with the single vacancies). The drawback here is the enormous amount of computation due to the large number of atoms in the lattice (in [15] it was taken equal to 129600).…”

Section: Introductionmentioning

confidence: 99%

Determination of the thermal characteristics of flat solids

Balabanov¹,

Pogonin²,

Pchelintsev³

2015

ams

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The article focuses on the inverse heat conduction problem which implies defining constant thermal properties (the thermal conductivity and thermal diffusivity) of flat solids, based on five measurements of temperature. The authors find the solution of nonstationary direct problem with a point source of heat in the plane with the Laplace transform in time and the Fourier one of the coordinates. The equation is obtained to determine the existence and uniqueness of the solution of the inverse problem.

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“…Розвиток сучасної мiкро-та наноелектронiки пов'язаний з розробкою нових напiвпровiдникових матерiалiв або вдосконаленням властивостей уже наявних. Такий напiвпровiдниковий матерiал, як германiй, на сьогоднi є перспективним матерiалом для створення на його основi рiзних електронних приладiв та сенсорiв, таких, як дiоди, трiоди, дозиметричнi прилади, тензодатчики, датчики Голла, детектори iнфрачервоного випромiнювання [1,2]. Технологiї напруженого германiю знаходять своє практичне використання в нанорозмiрних транзисторних структурах та нанофотонiцi [3][4][5][6][7].…”

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The impact of intrinsic conductivity on the mechanisms of tensoresistance of uniaxially deformed n-Ge single crystals

Luniov¹

2019

J. Phys. Stud.

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Дослiджено тензоопiр для одновiсно деформованих уздовж кристалографiчного напрямку [100] монокристалiв n-Ge в д власної провiдностi. Особливостi тензоопору n-Ge та нелiнiйне зростання концентрацiї електронiв для цих монокристалiв у дiапазонi одновiсних тискiв вiд 0.8 до 2.4 ГПа пояснено двозонним механiзмом власної провiдностi, коли зона провiдностi германiю за таких тискiв стає (L1 − ∆1)-типу. Рiзке зменшення питомого опору n-Ge за одновiсних тискiв P > 2.4 ГПа пов'язане зi збiльшенням величини баричного коефiцiєнта змiни ширини забороненої зони внаслiдок (L1 − ∆1)iнверсiї типу абсолютного мiнiмуму в германiї. Ключовi слова: тензоопiр, одновiсний тиск, монокристали германiю, власна провiднiсть, (L1 − ∆1)-iнверсiя.

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Molecular-dynamics calculation of the thermal conductivity coefficient of the germanium single crystal

Cited by 8 publications

References 10 publications

Mechanisms of electron scattering in uniaxially deformed n-Ge⟨Sb, Au⟩ single crystals

Mechanisms of electron scattering in uniaxially deformed n-Ge⟨Sb, Au⟩ single crystals

Determination of the thermal characteristics of flat solids

The impact of intrinsic conductivity on the mechanisms of tensoresistance of uniaxially deformed n-Ge single crystals

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