2008
DOI: 10.1017/s1431927608085528
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Molecular Depth Profiling to 3D Molecular Imaging with XPS and TOF-SIMS

Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

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“…Ion sputtering is the main process taking place during an analysis based on secondary ion mass spectrometry (SIMS) . It is also an essential process for depth profiling, combined with X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). All three methods employ ion guns for sputtering, although the sputtering process itself is also present in the case of glow-discharge optical emission spectroscopy (GDOES) or glow-discharge mass spectrometry (GDMS). , The main difference is the characteristic of the GDOES or GDMS processes, as ions are intrinsic to the plasma that flows toward the cathode, causing its surface to be sputtered away. , These methods are used in many areas of research, for example, during the analysis of oxide layers, while studying corrosion properties, polymer films, mono- and multilayers, biomaterials, microelectronics, , power-storage materials, solar cells, , and catalysts . However, regardless of the exact process used for the ion sputtering, the ion beam generated by the ion gun or the plasma flow, some damage caused by the ion bombardment is always present. The accumulation of damage is observed as surface roughening, which is most commonly determined with atomic force microscopy (AFM). , This technique is especially suitable for the characterization of nanostructures formed on the surface since it is optimized to achieve molecular and atomic resolutions. However, AFM can also be used to study many other topographical characteristics of the sample, its conductivity at the nano level, and different forces using its spectroscopy mode. …”
Section: Introductionmentioning
confidence: 99%
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“…Ion sputtering is the main process taking place during an analysis based on secondary ion mass spectrometry (SIMS) . It is also an essential process for depth profiling, combined with X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). All three methods employ ion guns for sputtering, although the sputtering process itself is also present in the case of glow-discharge optical emission spectroscopy (GDOES) or glow-discharge mass spectrometry (GDMS). , The main difference is the characteristic of the GDOES or GDMS processes, as ions are intrinsic to the plasma that flows toward the cathode, causing its surface to be sputtered away. , These methods are used in many areas of research, for example, during the analysis of oxide layers, while studying corrosion properties, polymer films, mono- and multilayers, biomaterials, microelectronics, , power-storage materials, solar cells, , and catalysts . However, regardless of the exact process used for the ion sputtering, the ion beam generated by the ion gun or the plasma flow, some damage caused by the ion bombardment is always present. The accumulation of damage is observed as surface roughening, which is most commonly determined with atomic force microscopy (AFM). , This technique is especially suitable for the characterization of nanostructures formed on the surface since it is optimized to achieve molecular and atomic resolutions. However, AFM can also be used to study many other topographical characteristics of the sample, its conductivity at the nano level, and different forces using its spectroscopy mode. …”
Section: Introductionmentioning
confidence: 99%
“… 3 , 5 7 The main difference is the characteristic of the GDOES or GDMS processes, as ions are intrinsic to the plasma that flows toward the cathode, causing its surface to be sputtered away. 6 , 8 These methods are used in many areas of research, for example, during the analysis of oxide layers, 9 while studying corrosion properties, 10 polymer films, 11 mono- and multilayers, 12 biomaterials, 13 microelectronics, 14 , 15 power-storage materials, 16 solar cells, 17 , 18 and catalysts. 19 However, regardless of the exact process used for the ion sputtering, the ion beam generated by the ion gun or the plasma flow, some damage caused by the ion bombardment is always present.…”
Section: Introductionmentioning
confidence: 99%