Molecular-beam epitaxy of p-type m-plane GaN

McLaurin, M.; Mates, Thomas E.; Speck, James S.

doi:10.1063/1.1977204

Cited by 67 publications

(145 citation statements)

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“…A Hall bar geometry, which is described in Ref. 8, was used with the m-plane oriented samples. The sample sheet resistances were derived from linear transfer length method ͑TLM͒ measurements ͑mesa-isolated 100ϫ 200 m 2 contacts with 5 -50 m spacings͒.…”

Section: Methodsmentioning

confidence: 99%

“…We have previously reported on our early measurements of p-type doping with Mg in PAMBE grown m-plane GaN, which show relatively high conductivity films compared to those realized by PAMBE growth of c-plane GaN. 8 In this report, we present an expanded analysis of our m-plane oriented GaN:Mg films and compare their electrical properties to equivalently doped, uninverted c-plane oriented films that have been grown using a method that suppresses the formation of inversion domains for at least moderate levels of Mg incorporation. Because n-type doping and structural quality are also important to the production of electrical devices, we also present results from physical characterization of our m-plane GaN templates, which were grown on m-plane SiC, as well as electrical measurements of Si-doped films.…”

Section: Introductionmentioning

confidence: 99%

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Growth of p-type and n-type m-plane GaN by molecular beam epitaxy

McLaurin

Mates

et al. 2006

Journal of Applied Physics

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Plasma-assisted molecular beam epitaxial growth of Mg-doped, p-type and Si-doped, n-type m-plane GaN on 6H m-plane SiC is demonstrated. Phase-pure, m-plane GaN films exhibiting a large anisotropy in film mosaic ͑ϳ0.2°full width at half maximum, x-ray rocking curve scan taken parallel to ͓1120͔ versus ϳ2°parallel to ͓0001͔͒ were grown on m-plane SiC substrates. Maximum hole concentrations of ϳ7 ϫ 10 18 cm −3 were achieved with p-type conductivities as high as ϳ5 ⍀ −1 cm −1 without the presence of Mg-rich inclusions or inversion domains as viewed by cross-section transmission electron microscopy. Temperature dependent Hall effect measurements indicate that the Mg-related acceptor state in m-plane GaN is the same as that exhibited in c-plane GaN. Free electron concentrations as high as ϳ4 ϫ 10 18 cm −3 were measured in the Si-doped m-plane GaN with corresponding mobilities of ϳ500 cm 2 / V s measured parallel to the ͓1120͔ direction.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth of p-type and n-type m-plane GaN by molecular beam epitaxy

McLaurin

Mates

et al. 2006

Journal of Applied Physics

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“…Simultaneously, the X-ray rocking curve (XRC) full width at half maximum (FWHM) values become strongly dependent on incident X-ray beam direction beyond this critical thickness. Anisotropic in-plane compressive strain is initially present and gradually relaxes mainly in the [11][12][13][14][15][16][17][18][19][20] direction when growing thicker films. Low-temperature photoluminescence (PL) spectra are dominated by the GaN near-band-edge peak and show only weak signal related to basal plane stacking faults (BSF).…”

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confidence: 99%

“…A surface roughening is observed caused by the increased size of hillock-like features. Additionally, small steps which are perfectly aligned in (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) planes appear for samples with a thickness of ~0.5 µm and above. Simultaneously, the X-ray rocking curve (XRC) full width at half maximum (FWHM) values become strongly dependent on incident X-ray beam direction beyond this critical thickness.…”

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Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates

Mauder

Reuters

Khoshroo

et al. 2010

Journal of Crystal Growth

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The anisotropic film properties of m-plane GaN deposited by metal organic vapour phase epitaxy (MOVPE) on LiAlO 2 substrates are investigated. To study the development of layer properties during epitaxy, the total film thickness is varied between 0.2 and 1.7 µm. A surface roughening is observed caused by the increased size of hillock-like features. Additionally, small steps which are perfectly aligned in (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) planes appear for samples with a thickness of ~0.5 µm and above. Simultaneously, the X-ray rocking curve (XRC) full width at half maximum (FWHM) values become strongly dependent on incident X-ray beam direction beyond this critical thickness. Anisotropic in-plane compressive strain is initially present and gradually relaxes mainly in the [11][12][13][14][15][16][17][18][19][20] direction when growing thicker films. Low-temperature photoluminescence (PL) spectra are dominated by the GaN near-band-edge peak and show only weak signal related to basal plane stacking faults (BSF). The measured background electron concentration is reduced from ~10 20 cm -3 to ~10 19 cm -3 for film thicknesses of 0.2 µm and ~1 µm while the electron mobilities rise from ~20 to ~130 cm 2 /Vs. The mobilities are significantly higher in [0001] direction which we explain by the presence of extended planar defects in the prismatic plane. Such defects are assumed to be also the cause for the observed surface steps and anisotropic XRC broadening. . This is especially helpful for the design of thick quantum wells or double heterostructure devices to mitigate the effects of the efficiency droop [2]. Limited availability of large-scale freestanding nonpolar GaN wafers as well as their high price favours the heteroepitaxial growth on foreign substrates. (100) LiAlO 2 is an interesting option for this approach because of the very low lattice mismatch with m-plane (1-100) GaN. It amounts to -1.7 % and -0.3 % in [11][12][13][14][15][16][17][18][19][20] and [0001] direction of GaN, respectively, giving rise to anisotropic strain in the layer [3]. In addition to that, the material is produced by the comparably cheap Czochralski pulling method. A major disadvantage of this substrate is the thermal and chemical instability which demands special care on the epitaxial process and leads to highly n-type doped films, most likely related to oxygen incorporation [4]. The growth of high-quality m-plane GaN on LiAlO 2 was already reported using various techniques as molecular beam epitaxy (MBE) [5], hydride vapour phase epitaxy (HVPE) [6] and metal organic vapour phase epitaxy (MOVPE) [7]. However, only few reports contain detailed data on the anisotropic film properties [8]. In this contribution, we present an elaborate investigation on the development of the anisotropic crystal properties during MOVPE of m-plane GaN on LiAlO 2 .

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“…4,5 On top of performance issues, cost is an important factor for producing viable device structures. To date, m-plane III-nitride LEDs have been grown on substrates such as Si, 6 m-plane SiC, 7 free standing m-plane GaN, 8 a-plane sapphire, 9 r-plane sapphire, 10,11 and c-LiAlO 2 . 4,12 Amongst these substrates, the use of Si and c-LiAlO 2 are considered to be the most economically viable.…”

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confidence: 99%

Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

Naresh-Kumar

Mauder

Wang

et al. 2013

Applied Physics Letters

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Molecular-beam epitaxy of p-type m-plane GaN

Cited by 67 publications

References 12 publications

Growth of p-type and n-type m-plane GaN by molecular beam epitaxy

Growth of p-type and n-type m-plane GaN by molecular beam epitaxy

Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates

Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

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