Molecular beam epitaxy of IV–VI semiconductor hetero‐ and nano‐structures

Springholz, G.; Bauer, G.

doi:10.1002/pssb.200675616

Cited by 17 publications

(10 citation statements)

References 39 publications

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“…The most widely studied examples of QDs based on III–V compounds are the InGaAs- [10] and InGaN- [11] based QDs grown by Stranski–Krastanow technique [12]. In the case of GaAsBi, such a growth mechanism is still not realized.…”

Section: Introductionmentioning

confidence: 99%

“…The growth of nanostructures—nanowires, strained quantum wells or quantum dots (QDs)—is a popular way to obviate the lattice mismatch between a substrate and the epitaxial layer grown on it. The most widely studied examples of QDs based on III–V compounds are the InGaAs- [ 10 ] and InGaN- [ 11 ] based QDs grown by Stranski–Krastanow technique [ 12 ]. In the case of GaAsBi, such a growth mechanism is still not realized.…”

Section: Introductionmentioning

confidence: 99%

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Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells

et al. 2017

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Formation of bismuth nanocrystals in GaAsBi layers grown by molecular beam epitaxy at 330 °C substrate temperature and post-growth annealed at 750 °C is reported. Superlattices containing alternating 10 nm-thick GaAsBi and AlAs layers were grown on semi-insulating GaAs substrate. AlAs layers have served as diffusion barriers for Bi atoms, and the size of the nanoclusters which nucleated after sample annealing was correlating with the thickness of the bismide layers. Energy-dispersive spectroscopy and Raman scattering measurements have evidenced that the nanoparticles predominantly constituted from Bi atoms. Strong photoluminescence signal with photon wavelengths ranging from 1.3 to 1.7 μm was observed after annealing; its amplitude was scaling-up with the increased number of the GaAsBi layers. The observed photoluminescence band can be due to emission from Bi nanocrystals. The carried out theoretical estimates support the assumption. They show that due to the quantum size effect, the Bi nanoparticles experience a transition to the direct-bandgap semiconducting state.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells

et al. 2017

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“…24 The technology for synthesizing and engineering these materials, in both bulk and low-dimensional form, has been well developed by decades of efforts. 25 Therefore we anticipate that TCIs in IV-VI semiconductors will become an extremely versatile platform for exploring topological quantum phenomena, and, possibly, novel device applications.…”

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confidence: 99%

Two types of surface states in topological crystalline insulators

2013

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Topological crystalline insulators (TCIs) are new states of matter whose topological distinction relies on the crystal symmetry of periodic solids. The first material realization of TCIs has recently been predicted and observed in IV-VI semiconductor SnTe and related alloys. By combining k • p theory and band structure calculation, we present a unified approach to study topological surface states on various crystal surfaces of these TCI materials based on the electronic structure of the bulk. Depending on the surface orientation, we find two types of surface states with qualitatively different properties. In particular, the (111) surface states consist of four Dirac cones centered at¯ andM, while Dirac cones on (001) and (110) surfaces are located at non-time-reversal-invariant momenta. The latter types of surface states exhibit a Lifshitz transition as a function of Fermi energy, which is accompanied by a Van Hove singularity in the density of states arising from saddle points in the band structure.

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“…The IV-VI rocksalt structure is known to build a glide plane system under epitaxial and thermal strains forming dislocations at the interface to the substrate, which extend to the surface. [12][13][14] The MBE growth of SnTe has been studied on various substrates, including Si, BaF 2 , Bi 2 Te 3 , PbSe, and CdTe [15][16][17][18][19] . Here we study epitaxy of thin SnTe(111) films, a facet that is hardly accessible by crystal cleaving, 20 on lattice mismatched CdTe(111) to obtain in-plane tensile strain.…”

Section: Introductionmentioning

confidence: 99%

Breaking crystalline symmetry of epitaxial SnTe films by strain

Schreyeck

Βrunner

Molenkamp

et al. 2019

Phys. Rev. Materials

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SnTe belongs to the recently discovered class of topological crystalline insulators. Here we study the formation of line defects which break crystalline symmetry by strain in thin SnTe films.Strained SnTe(111) films are grown by molecular beam epitaxy on lattice-and thermal expansion coefficient-mismatched CdTe. To analyze the structural properties of the SnTe films we applied in-situ reflection high energy electron diffraction, x-ray reflectometry, high resolution x-ray diffraction, reciprocal space mapping, and scanning tunneling microscopy. This comprehensive analytical approach reveals a twinned structure, tensile strain, bilayer surface steps and dislocation line defects forming a highly ordered dislocation network for thick films with local strains up to 31% breaking the translational crystal symmetry.

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Molecular beam epitaxy of IV–VI semiconductor hetero‐ and nano‐structures

Cited by 17 publications

References 39 publications

Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells

Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells

Two types of surface states in topological crystalline insulators

Breaking crystalline symmetry of epitaxial SnTe films by strain

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