Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells

Butkutė, Renata; Niaura, Gediminas; Pozingytė, Evelina; Čechavičius, Bronislovas; Selskis, Algirdas; Skapas, Martynas; Karpus, V.; Krotkus, A.

doi:10.1186/s11671-017-2205-7

Cited by 22 publications

(19 citation statements)

References 36 publications

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“…Crystalline structure was also investigated using high‐resolution X‐Ray diffractometer Rigaku SmartLab. Photoluminescence measurements of the annealed GaAsBi/AlAs MQW demonstrated quantum confinement effects attributed to the Bi QDs …”

Section: Methodssupporting

confidence: 55%

“…An obvious correlation between the size of QDs and the width of QW layers can be traced in the image. In our previous study, [7] we have qualitatively shown the feasibility of QD size control by changing QW's thickness. In this study, a large array (20 MQW's) of uniform QW's was grown in order to accurately quantify the distribution of sizes (%1500 Bi QD's in total).…”

Section: Methodsmentioning

confidence: 77%

“…Photoluminescence measurements of the annealed GaAsBi/AlAs MQW demonstrated quantum confinement effects attributed to the Bi QDs. [7] 3. Results and Discussion Figure 1 show as-grown and annealed at 750 C temperature samples.…”

Section: Methodsmentioning

confidence: 99%

“…However, the effect of annealing GaAsBi is still ambiguous. It has been shown by our group, [7] and other researchers, [8,9] that the annealing at temperatures above 600 C leads to several new features, the most significant of which is a commonly observed onset of an intense photoluminescence (PL) in the wavelength range from 1.35 to 1.5 μm. The latter process is accompanied by the formation Bi nanoparticles and reduction of Bi content in a surrounding GaAsBi layer.…”

Section: Introductionmentioning

confidence: 99%

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HRTEM Study of Size‐Controlled Bi Quantum Dots in Annealed GaAsBi/AlAs Multiple Quantum Well Structure

Skapas

Stanionytė

Paulauskas

et al. 2019

Physica Status Solidi (b)

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High‐resolution transmission electron microscopy (HRTEM) study of statistically large number of Bi quantum dots (QD) in annealed GaAsBi/AlAs multiple quantum well (MQW) structures is presented in this work. Superlattices containing 20 alternating periods of 10 nm thick GaAsBi quantum well and AlAs 20 nm thick barrier layers are grown on semi‐insulating GaAs at 330 °C temperature. Dispersed Bi quantum dots are formed within the bismide layers during a post‐growth annealing at 750 °C. Energy dispersive X‐ray (EDX) mapping and high‐angle annular dark‐field scanning transmission electron microscopy (HAADF‐STEM) analysis reveal that GaAsBi phase is altered during the annealing treatment forming a partially Bi‐depleted GaAsBi phase and semiconducting Bi nanoparticles. AlAs layers are found to act as barriers for Bi out‐diffusion, thus controlling the size of the QDs. The analysis of HRTEM micrographs confirms that Bi quantum dots consist of a rhombohedral Bi phase randomly distributed within zinc blende GaAsBi layers. Geometric phase analysis (GPA) also shows that GaAsBi layers are strained with respect to AlAs layers, as supported by the high‐resolution X‐ray diffraction (HRXRD) data. These findings demonstrate a highly controlled synthesis of Bi‐based quantum dots and pave the way for future applications in the field of infrared devices.

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Section: Methodssupporting

confidence: 55%

Section: Methodsmentioning

confidence: 77%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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HRTEM Study of Size‐Controlled Bi Quantum Dots in Annealed GaAsBi/AlAs Multiple Quantum Well Structure

Skapas

Stanionytė

Paulauskas

et al. 2019

Physica Status Solidi (b)

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“…For example, anti-sites, where the group III or V sites have an element from the other site, as has also been seen in GaAs(Bi) [32,33], may increase the observed lattice mismatch. We speculate that it is also possible that in InGaAsBi, bismuth gives rise to inhomogeneities leading to the formation of clusters or other localised structures in the layer similar to that observed in GaAsBi [20,34,35,36]. Additionally, observations of surface roughness from the SEM images ( Fig.…”

Section: Rbs Channelling Measurementsmentioning

confidence: 70%

A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques

Sharpe

Marko

Duffy

et al. 2019

Journal of Applied Physics

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In this work we used a combination of photoluminescence (PL), high resolution X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) techniques to investigate material quality and structural properties of MBE-grown InGaAsBi samples (with and without an InGaAs cap layer) with targeted bismuth composition in the 3-4% range. XRD data showed that the InGaAsBi layers are more homogenous in the uncapped samples. For the capped samples, the growth of the InGaAs capped layer at higher temperature affects the quality of the InGaAsBi layer and bismuth distribution in the growth direction. Low temperature PL exhibited multiple emission peaks; the peak energies, widths and relative intensities were used for comparative analysis of the data in line with the XRD and RBS results. RBS data at random orientation together with channelled measurements allowed both an estimation of the bismuth composition as well as analysis of the structural properties. The RBS channelling showed evidence of higher strain due to possible anti-site defects in the capped samples grown at a higher temperature. It is also suggested that the growth of the capped layer at high temperature causes deterioration of the bismuth-layer quality. The RBS analysis demonstrated evidence of a reduction of homogeneity of uncapped InGaAsBi layers with increasing bismuth concentration. The uncapped higher bismuth concentration sample showed less defined channelling dips suggesting poorer crystal quality and clustering of bismuth on the sample surface.

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GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2021

Physica Status Solidi (b)

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GaAsBi has been researched as a candidate material for optoelectronic devices for around two decades. Bi‐induced localized states induce a rapid rising of the valence band edge through a band anticrossing interaction, which has a profound effect on the bandgap and the spin–orbit splitting. The band engineering possible, even with just a few percent bismuth, makes GaAsBi an attractive material for THz emitters, telecommunication lasers, and low noise photodetectors, among other devices. There has been substantial progress in some of these areas; however, progress toward many of the potential applications of GaAsBi has been hindered by device quality issues, brought about by the low substrate temperatures necessary for the growth of GaAsBi with sufficiently large Bi fractions. This review, presents an overview of the applications for which GaAsBi has been advocated and the key results in these areas. The molecular beam epitaxy growth and postgrowth processing of GaAsBi are then explored as well as the novel techniques that have been suggested to improve material quality.

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Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells

Cited by 22 publications

References 36 publications

HRTEM Study of Size‐Controlled Bi Quantum Dots in Annealed GaAsBi/AlAs Multiple Quantum Well Structure

HRTEM Study of Size‐Controlled Bi Quantum Dots in Annealed GaAsBi/AlAs Multiple Quantum Well Structure

A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

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