Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs

Larkins, E.C.; Harris, James S.

doi:10.1016/b978-081551371-1.50004-4

Cited by 16 publications

(16 citation statements)

References 399 publications

(148 reference statements)

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“…2) does not conform to the modified Cardona equation. As shown in the figure, the peak labeled ''C'' with a transition energy of (*1.49 eV) is likely to arise from Carbon (Ledentsov et al 1992), which is a common impurity from heating elements inside the MBE during growth (Larkins and Harris 1995). As temperature is increased, defect or impurity emission peaks are no longer observable, indicating that the impurity energy level has likely thermalized.…”

Section: Photoluminescence Measurements On Unstrained Qwsmentioning

confidence: 96%

Temperature behavior of unstrained (GaAs/AlGaAs) and strained (InGaAs/GaAs) quantum well bandgaps

et al. 2015

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The Cardona equation describing the temperature behavior of a bulk semiconductor is utilized to fit experimental photoluminescence data for both strained and unstrained quantum wells (QWs). To account for confinement energy and strain energy, the Cardona equation was modified to include the respective energy offsets. Results of modeling experimentally obtained PL of GaAs/AlGaAs QWs for the unstrained case, and PL of InGaAs/GaAs QWs for the strained case, shows that the modified Cardona equation gives excellent fits to the temperature behavior even for QW bandgaps. Thus, the equation is utilized to extract QW eigenenergies, which are verifiable using the usual effective mass approximation method in solving Schrodinger's equation for a finite potential well.

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Section: Photoluminescence Measurements On Unstrained Qwsmentioning

confidence: 96%

Temperature behavior of unstrained (GaAs/AlGaAs) and strained (InGaAs/GaAs) quantum well bandgaps

et al. 2015

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“…2) сегрегацией и десорбцией атомов Ga и/или In с ростом температуры, что, наоборот, увеличивает концентрацию дефектов [24,25].…”

Section: методика экспериментаunclassified

GaAs/AlGaAs- и InGaAs/AlGaAs-гетероструктуры для мощных полупроводниковых инфракрасных излучателей

Гуляев¹,

Dmitriev²,

Fateev³

et al. 2021

Журнал Технической Физики

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Определен внутренний квантовый выход люминесценции GaAs/AlGaAs- и InGaAs/AlGaAs-гетероструктур для инфракрасных светодиодов. Исследовано влияние ростовых условий гетероструктур, выращенных методом молекулярно-лучевой эпитаксии и пост-ростового отжига на квантовый выход гетероструктур. Показано, что совокупной оптимизацией данных процессов удается повысить квантовый выход люминесценции исследуемых гетероструктур до 75-80% при умеренной мощности накачки. Ключевые слова: гетероструктуры, кельвиновская зондовая микроскопия, молекулярно-лучевая эпитаксия.

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“…Analysis of its characteristics is used for the development of electronics and instrumentation technology. The performance of GaAs materials selected to be applied as optical materials for lasers [1], detectors and photovoltaics [2], also as substrate materials [3,4], are influenced by their electronic properties. The electronic properties could be analyzed from the characteristics of the density of state (DOS) and energy band diagram, as well as the band gap of the material.…”

Section: Introductionmentioning

confidence: 99%

Study of Electronic Properties of GaAs Semiconductor Using Density Functional Theory

Putra

Purwandari

Nugroho

2021

CERiMRE

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The properties of GaAs material in zinc blende type was calculated using Hiroshima Linear Plane Wave program based on the Density Functional Theory. This calculation aims to determine electronic properties of GaAs material are based on Density of States and energy band structure. This simulation’s results are DOS shows that hybridization of s orbital of Ga with s orbital of As provides covalent properties. The simulation of energy band structure from GaAs material indicates that semiconductor properties of GaAs is direct band gap. The energy band gap results obtained for GaAs is 0.80 eV. The computational result of the energy band gap calculation form HiLAPW has better accuracy and prediction with good agreement within reasonable acceptable errors when compared to some other DFT programs and the results of the experimental obtained.

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Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs

Cited by 16 publications

References 399 publications

Temperature behavior of unstrained (GaAs/AlGaAs) and strained (InGaAs/GaAs) quantum well bandgaps

Temperature behavior of unstrained (GaAs/AlGaAs) and strained (InGaAs/GaAs) quantum well bandgaps

GaAs/AlGaAs- и InGaAs/AlGaAs-гетероструктуры для мощных полупроводниковых инфракрасных излучателей

Study of Electronic Properties of GaAs Semiconductor Using Density Functional Theory

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