Molecular‐Beam Epitaxy of Antimonides for Optoelectronic Devices

Asahi, H.; Horíkoshi, Yoshiji

doi:10.1002/9781119354987.ch14

Cited by 5 publications

(3 citation statements)

References 105 publications

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“…The growth procedure for the DL part itself was similar to that used for GaSb DLs grown on their native substrate 63 . More details on the DL design and growth can be found in "Materials and methods".…”

Section: Epitaxy Of the Gasb DL In The Recessed Area And Materials Pr...mentioning

confidence: 99%

Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

et al. 2023

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Silicon (Si) photonics has recently emerged as a key enabling technology in many application fields thanks to the mature Si process technology, the large silicon wafer size, and promising Si optical properties. The monolithic integration by direct epitaxy of III–V lasers and Si photonic devices on the same Si substrate has been considered for decades as the main obstacle to the realization of dense photonics chips. Despite considerable progress in the last decade, only discrete III–V lasers grown on bare Si wafers have been reported, whatever the wavelength and laser technology. Here we demonstrate the first semiconductor laser grown on a patterned Si photonics platform with light coupled into a waveguide. A mid-IR GaSb-based diode laser was directly grown on a pre-patterned Si photonics wafer equipped with SiN waveguides clad by SiO2. Growth and device fabrication challenges, arising from the template architecture, were overcome to demonstrate more than 10 mW outpower of emitted light in continuous wave operation at room temperature. In addition, around 10% of the light was coupled into the SiN waveguides, in good agreement with theoretical calculations for this butt-coupling configuration. This work lift an important building block and it paves the way for future low-cost, large-scale, fully integrated photonic chips.

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Section: Epitaxy Of the Gasb DL In The Recessed Area And Materials Pr...mentioning

confidence: 99%

Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

et al. 2023

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“…Prior to being loaded into the MBE reactor, the 50-mm GaSb-on-Si MOVPE template was thoroughly cleaned with organic solvents before being treated with an oxygen plasma to remove any residual resist contamination. The template was then handled in the same way as a regular, epi-ready GaSb substrate [13] and the laser structure was similar to previous ones grown on Si [8,14,15] for the sake of comparison. The wafer was heated up to around 560°C under Sb 2 flux for oxide removal.…”

Section: Mbe Of the Laser Heterostructurementioning

confidence: 99%

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Monge-Bartolomé¹,

Cerba²,

Díaz-Thomas³

et al. 2020

Opt. Express

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We report on 2.3-µm etched-cavity GaSb-based laser diodes (LDs) epitaxially integrated on on-axis (001)Si and benchmarked against their cleaved facet counterparts. The LDs were grown in two steps. First, a GaSb-on-Si template was grown by metal-organic vapor phase epitaxy (MOVPE) before the growth of the LD heterostructure by molecular-beam epitaxy. Different etched-facet geometries operate in continuous wave well above room temperature, and their performance are similar to those of cleaved-cavity LDs. These results show that etching mirrors is a viable route to form laser cavities in the GaSb technology and that MOVPE GaSb-on-Si templates are a suitable platform for optoelectronic devices overgrowth.

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“…The so-called antimonides among III-V semiconductors include GaSb, InAs, InSb, AlSb, and their ternary, quaternary, or even pentanary alloys. With their help, it is possible to create a wide range of band alignments [11]. The use of a pentanary alloy can be advantageous to the device developer.…”

Section: Introductionmentioning

confidence: 99%

Computational study of lattice dynamics and mechanical properties of Al_xIn_1-xP_ySb_zAs_1-y-z/InP under the effect of composition

Alyami,

Alfrnwani,

Othman

et al. 2024

Phys. Scr.

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For the first time, the composition dependence of pentanary AlInPSbAs alloy is described. The effect of composition on the polarity〖 (∝〗_p), mechanical parameters have been calculated for the AlxIn1-xPySbzAs1-y-z alloy. The impact of composition on the internal strain parameter (ζ), bond-bending force constant (α), bond-stretching force constant (β), and sound velocity (v) has been reported. Results from experiments and the investigated properties of the new alloy show a high degree of agreement. In this work, the density function theory (DFT) and the empirical pseudo-potential approach (EPM) with the virtual crystal approximation (VCA) have been used. The outcomes are expected to be used in optoelectronic applications and in understanding the mechanical properties of AlxIn1-xPySbzAs1-y-z alloy.

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Molecular‐Beam Epitaxy of Antimonides for Optoelectronic Devices

Cited by 5 publications

References 105 publications

Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Computational study of lattice dynamics and mechanical properties of Al_xIn_1-xP_ySb_zAs_1-y-z/InP under the effect of composition

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Molecular‐Beam Epitaxy of Antimonides for Optoelectronic Devices

Cited by 5 publications

References 105 publications

Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Computational study of lattice dynamics and mechanical properties of AlxIn1-xPySbzAs1-y-z/InP under the effect of composition

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Product

Resources

About

Computational study of lattice dynamics and mechanical properties of Al_xIn_1-xP_ySb_zAs_1-y-z/InP under the effect of composition