Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe

Li, He; Wang, S.L; Yang, Jing; Yu, Meifang; Wu, Yan; Chen, X.Q; Fang, Weizheng; Qiao, Yi; Gui, Y. S.; Chu, Junhao

doi:10.1016/s0022-0248(98)01395-5

Cited by 21 publications

(8 citation statements)

References 10 publications

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“…[6][7][8][9][10][11] Previous work has mainly focused on the extent to which dislocation density can be reduced via TCA. Using TCA, an etch pit density (EPD) saturation limit of $1 9 10 6 cm À2 can be consistently achieved by applying appropriate annealing conditions.…”

Section: Introductionmentioning

confidence: 99%

Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si

Farrell

Rao

Brill

et al. 2011

Journal of Elec Materi

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In our previous study of ex situ thermal cycle annealing (TCA) of molecular beam epitaxy (MBE)-grown mercury cadmium telluride (HgCdTe) on CdTe/ Si(211) composite substrates we showed consistent dislocation density reduction to $1 9 10 6 cm À2 . In this work, we have extended our study to understand the effects of TCA at lower temperatures and fewer cycles than studied previously. By examining TCA performed at the lower end of the temperature spectrum (as low as 385°C), we are able to show an exponential correlation between etch pit density (EPD) and temperature. Varying the number of cycles also shows a similar exponential correlation with EPD. These results suggest that these are the two major factors driving dislocation annihilation and/or coalescence. In this paper, we discuss the theoretical mechanism behind dislocation reduction, both at the surface and throughout the bulk of the HgCdTe layer.

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Section: Introductionmentioning

confidence: 99%

Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si

Farrell

Rao

Brill

et al. 2011

Journal of Elec Materi

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“…When the oxide layer is removed (the RHEED pattern is appeared) the PSCT temperature should be immediately decreases to 300°C and start with the CdTe buffer growth. The first was the layers of ZnTe (about 0.1 μm) as a small crystal lattice mismatch with respect to GaAs than the CdTe (3.5μm layer is applied [9] ).…”

Section: Mbe Grownmentioning

confidence: 99%

Dirac’s HdCdTe semimetals grown by MBE technology

et al. 2016

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“…It has been reported that rapid thermal annealing (RTA) under N 2 vapor pressure has great effects in the dislocation reduction of HgCdTe/CdTe epilayers [8] , previously. In situ thermal annealing (TA) is also an effective way to reduce dislocation density [9] . However, it was difficult to obtain good morphology of HgCdTe epilayers at high annealing temperature for a long holding time.…”

Section: Introductionmentioning

confidence: 99%

Effects of thermal annealing on HgCdTe/CdTe/Si(211) by MBE

Shen

Fu³

et al. 2011

SPIE Proceedings

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In this paper, the effects of thermal annealing (TA) were studied by theoretical calculation and experiment. The calculation was based on the Masafumi's model of dislocation movement, modified with thermal stress and lattice-mismatch in the HgCdTe/CdTe/Si(211) heterostructure. As the calculation indicated, the temperature and holding time of TA had great effect on the dislocation reduction, while less improvement with the epilayer thickness and growth orientation. Upon the result of calculation, the TA and thermal cycle annealing (TCA) experiments were performed under different conditions, which fit the calculation properly. The dislocation reduction of TA was investigated by double crystal X-ray rocking curve (DCRC) and etch pit density (EPD) measurements. The EPD of 10μm SW~LW HgCdTe/Si under optimized thermal process could be decreased half order of magnitude, with the lowest EPD at 2×10 6 cm -2 , as well as the full width at half maximum (FWHM) of the DCRC to 57.8 arcsec.

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Molecular beam epitaxy (MBE) in situ high-temperature annealing of HgCdTe

Cited by 21 publications

References 10 publications

Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si

Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si

Dirac’s HdCdTe semimetals grown by MBE technology

Effects of thermal annealing on HgCdTe/CdTe/Si(211) by MBE

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