Molecular beam epitaxy grown PbEuSeTe buried-heterostructure lasers with continuous wave operation at 195 K

Abstract

Lattice-matched buried-heterostructure (BH) PbEuSeTe lasers were fabricated using a two-stage molecular beam epitaxy growth procedure. Lasers with 4-μm-wide and 0.6-μm-thick buried PbTe and Pb0.9976Eu0.0024Se0.0034Te0.9966 active layers were grown. Record continuous wave (cw) operating temperatures of 195 and 183 K were measured for BH diode lasers with binary PbTe active layer, and quaternary PbEuSeTe (0.22 at. % Eu) active layer compositions, respectively. For PbTe active layer BH lasers, threshold currents of 3.2 mA (80 K) and 36.2 mA (140 K) were measured in cw operation mode. For Pb0.9976Eu0.0024Se0.0034Te0.9966 BH active layer lasers, threshold currents of 2.9 mA (80 K) and 23.4 mA (140 K) were measured in cw operation mode.

Synthesis of narrow band gap SnTe nanocrystals: nanoparticles and single crystal nanowires via oriented attachment

“…However, the low thermal conductivity, high continuous wave output power and toxicity of lead salt prevent its use in many fields. 7 The III-V Sb compounds are mainly GaSb, InSb, InPSb, InAsSb, GaInAsSb, 8 etc., which are produced by MOCVD. The complex synthesis process, expensive and toxic raw materials are disadvantages to their applications.…”

plasma etching of IV-VI semiconductor nanostructures

“…In the fabrication of all these devices lithographic patterning and etching are of crucial importance. Up to now only wet chemical etching has been used for the fabrication of buried IV-VI heterostructure lasers [5,6] and ion beam milling for the patterning of IV-VI nanostructures with feature sizes below 1 µm [3]. For III-V and II-VI semiconductors, however, it has been shown that plasma etching is superior in several aspects as compared to ion milling and wet chemical etching.…”