Molecular beam epitaxy

Franchi, S.

doi:10.1016/b978-0-12-387839-7.00001-4

Cited by 14 publications

(7 citation statements)

References 219 publications

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“…where Δ𝐻𝐻 is the latent heat of vaporization, K is the Boltzmann constant, and P is the vapor pressure. This vapor pressure provides a constant atomic flux (𝐽𝐽) at the substrate growth surface which can be computed at a distance 𝐿𝐿 (cm) away from the cell given by [25]…”

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confidence: 99%

Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3

Kalarickal

Xia

McGlone

et al. 2019

Applied Physics Letters

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We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of -Ga2O3. We show on the basis of secondary ion mass spectroscopy (SIMS) analysis that Si flux is not limited by the vapor pressure of Si but by the formation of volatile SiO. The low sublimation energy of SiO leads to weak dependence of the SiO flux of Si cell temperature and a strong dependence on the background oxygen pressure. Extended exposure to activated oxygen results in reduction of SiO flux due to the formation of SiO2 on the Si surface. The work reported provides key understanding for incorporating Si into future oxide-based semiconductor heterostructure and device MBE growth.The high breakdown voltage [1] and availability of bulk substrates grown from melt [2-4] makes -Ga2O3 promising for various applications, including power switches [5,6], high frequency amplifiers [7,8] and high temperature electronics [9,10].High quality epitaxial growth with low defect density and a wide range of controllable n-type doping [2][3][4]11] are critical enablers for these applications. Variety of growth techniques like molecular beam epitaxy [12,13], metal organic chemical vapor deposition [14], halide vapor phase epitaxy [15] and low pressure chemical vapor deposition [16] have been utilized to realize high quality epitaxial layers of -Ga2O3. Since the conduction band of -Ga2O3 is largely made up of Ga s oribitals, group II elements like Si (30 meV), Ge (30 meV) and Sn (60 meV) provide shallow donor levels [9, 17, 18,] and a detailed understanding of the doping process of each one of them is critical in realizing the full potential of -Ga2O3 based devices.Si is the preferred n-type shallow donor in many III-V materials like GaN (20 meV) and GaAs (6 meV) due to its low activation energy and compatibility with epitaxial growth processes. In the case of molecular beam epitaxy, elemental high-purity silicon is typically used, with the effusion cell maintained at high temperatures (typically 1000 °C -1300 °C) required for sublimation of the solid Si. This typically provides excellent control of doping density up to 10 20 cm -3 [19,20].Plasma and ozone-based molecular beam epitaxy growth have been used to obtain Si-doped n-type -Ga2O3 with excellent transport properties [9,21]. However, the cell temperatures necessary to achieve Si doping have been found to be significantly lower [9,22,23] than that used typically for other non-oxide material systems. Since Si has a high sticking coefficient, this

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confidence: 99%

Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3

Kalarickal

Xia

McGlone

et al. 2019

Applied Physics Letters

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“…They were grown at 350 °C for 30 min, one after another on the same day, and adding a Zn or Te flux to the stoichiometric flux from the ZnTe cell. Flux ratios (atoms cm –2 s –1 ) were calculated from beam equivalent pressures (BEP): (a) strongly Te rich (Te/Zn: 4/1), (b) Te rich (Te/Zn: 1.7/1), (c) stoichiometric (Te/Zn: 1/1), and (d) Zn rich (Te/Zn: 1/2.3). At such temperature a 2D layer is also formed, and it can be observed by SEM, with a thickness around 200 nm under stoichiometric conditions.…”

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Structure and Morphology in Diffusion-Driven Growth of Nanowires: The Case of ZnTe

Rueda-Fonseca

Bellet-Amalric

Vigliaturo³

et al. 2014

Nano Lett.

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Gold-catalyzed ZnTe nanowires were grown at low temperature by molecular beam epitaxy on a ZnTe(111) B buffer layer, under different II/VI flux ratios, including with CdTe insertions. High-resolution electron microscopy and energy-dispersive X-ray spectroscopy (EDX) gave information about the crystal structure, polarity, and growth mechanisms. We observe, under stoichiometric conditions, the simultaneous presence of zinc-blende and wurtzite nanowires spread homogeneously on the same sample. Wurtzite nanowires are cylinder-shaped with a pyramidal-structured base. Zinc-blende nanowires are cone-shaped with a crater at their base. Both nanowires and substrate show a Te-ended polarity. Te-rich conditions favor zinc-blende nanowires, while Zn-rich suppress nanowire growth. Using a diffusion-driven growth model, we present a criterion for the existence of a crater or a pyramid at the base of the nanowires. The difference in nanowire morphology indicates lateral growth only for zinc-blende nanowires. The role of the direct impinging flux on the nanowire's sidewall is discussed.

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“…INTRODUCTIONMolecular beam epitaxy (MBE) in ultra-high-vacuum (UHV) provides unique flexibility and control properties for growing complex metal oxides. 1,2 The quasi-equilibrium deposition conditions during the growth allow maximum control of thickness and surface termination of single crystal epitaxial films, making it the method of choice when the low-energy properties of the grown heterostructures need to be investigated, such as charge transfer at the interface or the effects of controlled strain. 3-5 More generally, magnetism,…”

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An integrated ultra-high vacuum apparatus for growth and in situ characterization of complex materials

Vinai

Motti

Петров

et al. 2020

Review of Scientific Instruments

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Here we present an integrated ultra-high vacuum apparatus -named MBE-Cluster -dedicated to the growth and in situ structural, spectroscopic and magnetic characterization of complex materials. Molecular Beam Epitaxy (MBE) growth of metal oxides, e.g. manganites, and deposition of patterned metallic layers can be fabricated and in situ characterized by reflection high-energy electron diffraction (RHEED), low-energy electron diffraction (LEED) -Auger Electron Spectroscopy, X-ray photoemission spectroscopy (PES) and azimuthal longitudinal magneto-optic Kerr effect (MOKE). The temperature can be controlled in the range from 5 to 580 K, with the possibility of application of magnetic fields H up to ±7 kOe and electric fields E for voltages up to ±500 V. The MBE-Cluster operates for in-house research as well as user facility in combination with the APE beamlines at Sincrotrone-Trieste and the high harmonic generator (HHG) facility for timeresolved spectroscopy. I. INTRODUCTIONMolecular beam epitaxy (MBE) in ultra-high-vacuum (UHV) provides unique flexibility and control properties for growing complex metal oxides. 1,2 The quasi-equilibrium deposition conditions during the growth allow maximum control of thickness and surface termination of single crystal epitaxial films, making it the method of choice when the low-energy properties of the grown heterostructures need to be investigated, such as charge transfer at the interface or the effects of controlled strain. 3-5 More generally, magnetism,

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Molecular beam epitaxy

Cited by 14 publications

References 219 publications

Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3

Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3

Structure and Morphology in Diffusion-Driven Growth of Nanowires: The Case of ZnTe

An integrated ultra-high vacuum apparatus for growth and in situ characterization of complex materials

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