Structure and Morphology in Diffusion-Driven Growth of Nanowires: The Case of ZnTe

Rueda-Fonseca, Pamela; Bellet-Amalric, E.; Vigliaturo, Ruggero; Hertog, M. den; Genuist, Y.; André, R.; Robin, Éric; Artioli, Alberto; Stepanov, Petr; Ferrand, D.; Kheng, K.; Tatarenko, S.; Cibert, J.

doi:10.1021/nl4046476

Cited by 30 publications

(48 citation statements)

References 25 publications

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“…Beam equivalent pressures (BEP) were converted into flux ratios as described in Ref. 16 and checked using reflection high-energy electron diffraction (RHEED) oscillations. An important parameter for the growth of NWs, is the angle α of each effusion cell with respect to the normal to the substrate: this angle determines the ratio of average flux J N W impinging onto the facets of a normal NW to the flux J s impinging onto the substrate: J N W /J s = tan α/π.…”

Section: Experimental a Experimental Methods And Growth Conditionsmentioning

confidence: 99%

Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy

Rueda-Fonseca

Orrù

Bellet-Amalric

et al. 2016

Journal of Applied Physics

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With ZnTe as an example, we use two different methods to unravel the characteristics of the growth of nanowires by gold-catalyzed molecular beam epitaxy at low temperature. In the first approach, CdTe insertions have been used as markers, and the nanowires have been characterized by scanning transmission electron microscopy, including geometrical phase analysis, and energy dispersive electron spectrometry; the second approach uses scanning electron microscopy and the statistics of the relationship between the length of the tapered nanowires and their base diameter. Axial and radial growth are quantified using a diffusionlimited model adapted to the growth conditions; analytical expressions describe well the relationship between the NW length and the total molecular flux (taking into account the orientation of the effusion cells), and the catalyst-nanowire contact area. A long incubation time is observed. This analysis allows us to assess the evolution of the diffusion lengths on the substrate and along the nanowire sidewalls, as a function of temperature and deviation from stoichiometric flux.

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Section: Experimental a Experimental Methods And Growth Conditionsmentioning

confidence: 99%

Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy

Rueda-Fonseca

Orrù

Bellet-Amalric

et al. 2016

Journal of Applied Physics

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“…In our samples, energy dispersive x-ray analysis (EDX) also detects the presence of Zn oxide and of some Te oxide. 12 The cone shape of these NWs indicates that, under these growth conditions (low temperature and Te excess), the diffusion length of adatoms on the facets of the NW is not large. 12 This could limit the range of NW length which can be achieved.…”

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confidence: 94%

“…This cone shape is due to lateral growth induced by the low growth temperature. 12 The NW height distribution is large, from 300 nm to 1.5 µm for a 30 min growth time.…”

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confidence: 98%

“…For semiconductor NWs, a more complete calculation, 23 which is beyond the scope of this paper, shows that the previous expressions can be used for 111 oriented semiconductor NWs using the bulk modulus K = (c 11 + 2c 12 For the NWs studied in Ref. 7, with D c = 70 nm, D s =130 nm, and f = 1.04% corresponding to the lattice mismatch between a ZnTe core and a Zn 0.8 Mg 0.2 Te shell, 25 we obtain 2.31 eV for the heavy-hole exciton, in agreement with the observed PL line.…”

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Optical properties of single ZnTe nanowires grown at low temperature

Artioli

Rueda-Fonseca

Stepanov

et al. 2013

Applied Physics Letters

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Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature (350 • C) under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per µm 2 ). The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are 111 oriented. Low temperature microphotoluminescence and cathodoluminescence experiments have been performed on single nanowires. We observe a narrow emission line with a blue-shift of 2 or 3 meV with respect to the exciton energy in bulk ZnTe. This shift is attributed to the strain induced by a 5 nm-thick oxide layer covering the nanowires, and this assumption is supported by a quantitative estimation of the strain in the nanowires. There is currently a wide-spread interest for semiconductor nanowires (NWs), driven by their potential to constitute suitable building blocks for future nanoelectronic and nanophotonic devices. 1 During the past decade, selenide and telluride II-VI NWs have been extensively investigated for various applications such as nano-pillar solar cells, 2 photodetectors 3 or single photon sources. 4 Among II-VI's, ZnTe based NWs are particularly promising as offering a large range of potentialities. They can be grown by molecular beam epitaxy (MBE) using gold particles as catalyst. They can be efficiently doped electrically. 5 They can also be doped with magnetic impurities, 6,7 while the large difference between the temperatures suitable for the growth of GaAs NWs and for the incorporation of Mn as substitutional impurities makes the growth of (Ga,Mn)As NWs challenging. 8 As (Zn,Mn)Te can be doped strongly p-type so that ferromagnetism appears and transport studies are feasible in 2D, 9 ZnTe-based NWs are attractive for a basic study of spintronics mechanisms in 1D. In addition, CdTe quantum dots can be incorporated and used as a single photon source 10 or as a very sensitive optical probe of the spin properties. 11 A good control and the optimization of the growth conditions are prerequisites to improve the electronic and optical properties of the NWs. We present the MBE growth and the structural analysis of ultra-low density ZnTe NWs and we show that their high crystalline quality allows us to observe micro-photoluminescence (µPL) and cathodoluminescence (CL) emission from single NWs.ZnTe NWs were grown by MBE, using gold particles as a catalyst. A thin layer of gold was deposited on a 500 nm-thick ZnTe(111) buffer layer previously grown on a GaAs(111)B substrate. Gold droplets were formed at 350 • C and the NWs were grown at the same temperature.

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“…axial NW heterostructures, 25 and for advanced device applications. [26][27][28] Hence, current efforts aim at the control, 5,7,[29][30][31] and understanding 8,9,[32][33][34][35][36][37][38][39][40][41] of radial growth processes responsible for tapering. Of particular interest here are self-stabilizing growth processes that are closely linked to the liquid Ga-droplet.…”

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Radial Growth of Self-Catalyzed GaAs Nanowires and the Evolution of the Liquid Ga-Droplet Studied by Time-Resolved in Situ X-ray Diffraction

et al. 2017

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We report on a growth study of self-catalyzed GaAs nanowires based on time-resolved in situ X-ray structure characterization during molecular-beam-epitaxy in combination with ex situ scanning-electron-microscopy. We reveal the evolution of nanowire radius and polytypism and distinguish radial growth processes responsible for tapering and side-wall growth. We interpret our results using a model for diameter self-stabilization processes during growth of self-catalyzed GaAs nanowires including the shape of the liquid Ga-droplet and its evolution during growth.

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Structure and Morphology in Diffusion-Driven Growth of Nanowires: The Case of ZnTe

Cited by 30 publications

References 25 publications

Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy

Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy

Optical properties of single ZnTe nanowires grown at low temperature

Radial Growth of Self-Catalyzed GaAs Nanowires and the Evolution of the Liquid Ga-Droplet Studied by Time-Resolved in Situ X-ray Diffraction

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