Molecular-Beam Epitaxial Growth of a Far-Infrared Transparent Electrode for Extrinsic Germanium Photoconductors

Suzuki, Toyoaki; Wada, Takehiko; Hirose, Kazuyuki; Makitsubo, Hironobu; Kaneda, Hidehiro

doi:10.1086/667391

Cited by 4 publications

(1 citation statement)

References 24 publications

(38 reference statements)

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“…However, it is difficult to realize large-format compact array detectors, because these detectors need a huge mechanical system to stress the detectors. We have been developing BlockedImpurity-Band (BIB; Petroff et al 1986) type Ge detectors which can cover a wide far-IR wavelength range up to 200 µm without a huge mechanical system (Watanabe et al 2011;Kaneda et al 2011;Suzuki et al 2012). They are expected to realize large-format compact array detectors.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Far-Infrared Bib-Type Ge Detectors Fabricated With the Surface-Activated Wafer Bonding Technology

Hanaoka¹,

Kaneda²,

Oyabu³

et al. 2017

Publications of The Korean Astronomical Society

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To realize large-format compact array detectors covering a wide far-infrared wavelength range up to 200 µm, we have been developing Blocked-Impurity-Band (BIB) type Ge detectors with the roomtemperature surface-activated wafer bonding technology provided by Mitsubishi Heavy Industries. We fabricated various types of p + -i junction devices which possessed a BIB-type structure, and evaluated their spectral response curves using a Fourier transform spectrometer. From the Hall effect measurement, we also obtained the physical characteristics of the p + layers which constituted the p + -i junction devices.The overall result of our measurement shows that the p + -i junction devices have a promising applicability as a new far-infrared detector to cover a wavelength range of 100-200 µm.

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Section: Introductionmentioning

confidence: 99%

Evaluation of Far-Infrared Bib-Type Ge Detectors Fabricated With the Surface-Activated Wafer Bonding Technology

Hanaoka¹,

Kaneda²,

Oyabu³

et al. 2017

Publications of The Korean Astronomical Society

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Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy

et al. 2016

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We report the current status of the development of our new detectors for far-infrared (FIR) astronomy. We develop Blocked-Impurity-Band (BIB)-type Ge detectors to realize large-format compact arrays covering a wide FIR wavelength range up to 200 µm. We fabricated Ge junction devices of different physical parameters with a BIB-type structure, using the room temperature, surface-activated wafer bonding (SAB) method. We measured the absolute responsivity and the spectral response curve of each device at low temperatures, using an internal blackbody source in a cryostat and a Fourier transform spectrometer, respectively. The results show that the SAB Ge junction devices have significantly higher absolute responsivities and longer cut-off wavelengths of the spectral response than the conventional bulk Ge:Ga device. Based upon the results, we discuss the optimum parameters of SAB Ge junction devices for FIR detectors. We conclude that SAB Ge junction devices possess a promising applicability to next-generation FIR detectors covering wavelengths up to ∼200 µm with high responsivity. As a next step, we plan to fabricate a BIB-type Ge array device in combination with a low-power cryogenic readout integrated circuit.

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Development for Germanium Blocked Impurity Band Far-Infrared Image Sensors with Fully-Depleted Silicon-On-Insulator CMOS Readout Integrated Circuit

et al. 2016

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We are developing far-infrared (FIR) imaging sensors for low-background and high-sensitivity applications such as infrared astronomy. Previous FIR monolithic imaging sensors, such as an extrinsic germanium photo-conductor (Ge PC) with a PMOS readout integrated circuit (ROIC) hybridized by indium pixel-to-pixel interconnection, had three difficulties: (1) short cut-off wavelength (120 µm), (2) large power consumption (10 µW/pixel), and (3) large mismatch in thermal expansion between the Ge PC and the Si ROIC. In order to overcome these difficulties, we developed (1) a blocked impurity band detector fabricated by a surface-activated bond technology, whose cut-off wavelength is longer than 160 µm, (2) a fully-depleted silicon-on-insulator CMOS ROIC which works below 4 K with 1 µW/pixel operating power, and (3) a new concept, Si-supported Ge detector, which shows tolerance to 123 218 J Low Temp Phys (2016) 184:217-224 thermal cycling down to 3 K. With these new techniques, we are now developing a 32 × 32 FIR imaging sensor.

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Molecular-Beam Epitaxial Growth of a Far-Infrared Transparent Electrode for Extrinsic Germanium Photoconductors

Cited by 4 publications

References 24 publications

Evaluation of Far-Infrared Bib-Type Ge Detectors Fabricated With the Surface-Activated Wafer Bonding Technology

Evaluation of Far-Infrared Bib-Type Ge Detectors Fabricated With the Surface-Activated Wafer Bonding Technology

Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy

Development for Germanium Blocked Impurity Band Far-Infrared Image Sensors with Fully-Depleted Silicon-On-Insulator CMOS Readout Integrated Circuit

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