Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy

Hanaoka, Misaki; Kaneda, Hidehiro; Oyabu, Shinki; Yamagishi, Masao; Hattori, Yosuke; Ukai, Sota; Shichi, Kazuyuki; Wada, Takehiko; Suzuki, Toyoaki; Watanabe, Kentaroh; Nagase, Koichi; Baba, Shigeo; Kochi, Chihiro

doi:10.1007/s10909-016-1484-1

Cited by 22 publications

(10 citation statements)

References 11 publications

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“…Moreover, the high rate of thermal carriers has made this material unsuitable for detection at f ≤ 10 THz [29]. Other material in photon detectors can be tailored based on the nature of the interaction, such as extrinsic detectors from the Ge semiconductor [30], [31], and quantum wells (QWs) detectors made of GaAs semiconductor [32], [33]. Photon detectors have a good signal−to−noise performance and a fast response in the IR and Far-IR regions.…”

Section: B Operation Principlesmentioning

confidence: 99%

Input Power and Effective Area in Terahertz Detector Measurement: A Review

2023

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The field of terahertz (THz) science and technology research area have been exponentially growing recently, motivated by the increasing demand for safer security imaging, better quality control within manufacturing industries, space and astronomical investigation, biomedical diagnostics, and larger communication bandwidth. The THz waves detection mechanism is one of the critical components in developing a high efficiency and high sensitivity THz communication system. This paper reviews the principle and instrumentation of THz optical metrology for the precise and accurate characterization of THz detectors in the range of 0.1 THz to several THz. In this context, we individually discuss the determination of radiation input power and effective area followed by a survey of THz optical measurement methodology used in the state-of-the-art THz detectors. In addition, challenging issues remaining in the THz detector measurements are provided. This paper sets out a guideline to address the main concept behind the THz detector measurement as well as their challenges and opportunities. Additionally, useful insight is given through a summary of available power meter instrumentation for THz input power calibration.INDEX TERMS THz detectors, THz input power, effective area, THz metrology, antenna, THz measurements, THz instrumentation.

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Section: B Operation Principlesmentioning

confidence: 99%

Input Power and Effective Area in Terahertz Detector Measurement: A Review

2023

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“…The noise equivalent power (NEP) is calculated by taking account of shot noise of the dark current and the responsivity. The details of fabrication and characterization of the device are described elsewhere [9][10][11][12].…”

Section: Development Of Ge Bib Detectormentioning

confidence: 99%

Development for Germanium Blocked Impurity Band Far-Infrared Image Sensors with Fully-Depleted Silicon-On-Insulator CMOS Readout Integrated Circuit

et al. 2016

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We are developing far-infrared (FIR) imaging sensors for low-background and high-sensitivity applications such as infrared astronomy. Previous FIR monolithic imaging sensors, such as an extrinsic germanium photo-conductor (Ge PC) with a PMOS readout integrated circuit (ROIC) hybridized by indium pixel-to-pixel interconnection, had three difficulties: (1) short cut-off wavelength (120 µm), (2) large power consumption (10 µW/pixel), and (3) large mismatch in thermal expansion between the Ge PC and the Si ROIC. In order to overcome these difficulties, we developed (1) a blocked impurity band detector fabricated by a surface-activated bond technology, whose cut-off wavelength is longer than 160 µm, (2) a fully-depleted silicon-on-insulator CMOS ROIC which works below 4 K with 1 µW/pixel operating power, and (3) a new concept, Si-supported Ge detector, which shows tolerance to 123 218 J Low Temp Phys (2016) 184:217-224 thermal cycling down to 3 K. With these new techniques, we are now developing a 32 × 32 FIR imaging sensor.

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“…However, although the Ge-based impurity detector has been developed for many years, there is still a large gap compared with other terahertz detectors in terms of array scale, performance, and maturity [14,15], due to many fabrication difficulties and problems. For example, the typical pixel sizes of the reported Ge-based THz detectors are almost over 1 mm [16,17], which are too large to be arrayed on a large scale and lead to a complex refrigeration and optical system [18]. Therefore, the ground-based popularization and application of Ge-based THz detectors are limited and not even reported.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Pixel Size and Electrode Structure for Ge:Ga Terahertz Photoconductive Detectors

Wu¹,

Dong²,

Chen³

et al. 2022

Sensors

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To investigate the effects of the pixel sizes and the electrode structures on the performance of Ge-based terahertz (THz) photoconductive detectors, vertical structure Ge:Ga detectors with different structure parameters were fabricated. The characteristics of the detectors were investigated at 4.2 K, including the spectral response, blackbody response (Rbb), dark current density-voltage characters, and noise equivalent power (NEP). The detector with the pixel radius of 400 μm and the top electrode of the ring structure showed the best performance. The spectral response band of this detector was about 20–180 μm. The Rbb of this detector reached as high as 0.92 A/W, and the NEP reached 5.4 × 10−13 W/Hz at 0.5 V. Compared with the detector with a pixel radius of 1000 μm and the top electrode of the spot structure, the Rbb increased nearly six times, and the NEP decreased nearly 12 times. This is due to the fact that the optimized parameters increased the equivalent electric field of the detector. This work provides a route for future research into large-scale array Ge-based THz detectors.

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Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy

Cited by 22 publications

References 11 publications

Input Power and Effective Area in Terahertz Detector Measurement: A Review

Input Power and Effective Area in Terahertz Detector Measurement: A Review

Development for Germanium Blocked Impurity Band Far-Infrared Image Sensors with Fully-Depleted Silicon-On-Insulator CMOS Readout Integrated Circuit

Optimization of Pixel Size and Electrode Structure for Ge:Ga Terahertz Photoconductive Detectors

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