Molecular beam epitaxial growth of InAsN:Sb for midinfrared Optoelectronics

Zhuang, Qiandong; Godenir, A. M. R.; Krier, A.; Tsai, Gene; Lin, H. H.

doi:10.1063/1.2988281

Cited by 27 publications

(26 citation statements)

References 25 publications

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“…For these reasons, Sb segregation is highly favourable and, thus, its inclusion mitigates the axial growth of InAs materials as will be highlighted in the following section. As a consequence, an increased Sb addition with high Sb flux and larger Sb coverage results in greater decline in surface energy with a massive increase in alloy atomic size accompanied by an increase in Sb segregation [39]. This explains the disproportionate 0.2% rise in Sb content in the SG samples corresponding to a significant increase (4.16%) in FF Sb in sample B in comparison to A.…”

Section: Nano Resmentioning

confidence: 88%

“…In order to migrate, adatoms need to break out from their bonding with neighbouring atoms as well as with surfactant atoms leading to a heightened energy barrier for hopping and eventual reduction of the adatom migration length [44,45]. Hence, it is suggested that the introduction of the minutest concentration of Sb at the NWs growth initiation results in a decrease in In adatom diffusion length [15,39] enabling the enlargement of pre-deposited In droplets with a corresponding height reduction, as illustrated in Fig. 6 (note that the NWs dimensions are not drawn to scale and do not represent the extent of Sb-induced modification to NW geometry).…”

Section: Nano Resmentioning

confidence: 98%

“…It is evident that the Sb-containing samples exhibit a higher level of uniformity in NWs geometry (L NW and D NW ) than the reference InAs NWs which comparatively exhibits a significant level of geometrical variations. The sharp contrast could be attributed to the surfactant effect of Sb which promotes alloy homogeneity [39].…”

Section: Nano Resmentioning

confidence: 99%

See 2 more Smart Citations

Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires

et al. 2014

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The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) has been systematically investigated. InAs NWs were grown by molecular beam epitaxy with and without antimony (Sb) flux. It is demonstrated that trace amounts of Sb flux are capable of tuning the geometry of NWs, i.e., enhancing lateral growth and suppressing axial growth. We attribute this behavior to the surfactant effect of Sb which results in modifications to the kinetic and thermodynamic processes. A thermodynamic mechanism that accounts for Sb segregation in InAsSb NWs is also elucidated. This study opens a new route towards precisely controlled NW geometries by means of Sb addition.

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Section: Nano Resmentioning

confidence: 88%

Section: Nano Resmentioning

confidence: 98%

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Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires

et al. 2014

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“…Concrete progress requires accurate and simple modelling that can predict optical properties and become a tool for numerical characterization and device design from the ultra-violet to the THz range and Mid Infrared Ranges (Jepsen et al 2013;Gu et al 2014;Krier et al 2012;De la Mare et al 2009;Zhuang et al 2008). Furthermore, understanding the properties of new bulk semiconductors has attracted renewed interest in the solar cell material arena to avoid environmentally unfriendly materials such as Cd (Vidal et al 2010).…”

Section: Introductionmentioning

confidence: 99%

Automated numerical characterization of dilute semiconductors per comparison with luminescence

Oriaku

Zubelli

et al. 2017

Opt Quant Electron

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This paper combines analytical approximations for the optical absorption and luminescence of semiconductors with trust region-reflective methods, delivering a robust numerical characterization method to be used in the study of new bulk semiconductors per direct comparison with experimental spectra. It further extends recent applications of the theory to the case of dilute nitride semiconductors and confirms results for the s-shape of the luminescence peak as a function of temperature.

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“…Provided that growth conditions are optimized, the electrical properties show that the mobility and residual carrier concentration are not so strongly affected by the introduction of N compared with GaAsN [26][27][28]. Good quality material has been demonstrated both on InAs and on GaAs substrates [29,30] where the incorporation of N and the material quantum efficiency can be improved by the addition of Sb during growth [31,32]. More recently, dilute nitride quantum wells which exhibit mid-infrared PL emission have also been demonstrated [33].…”

Section: Introductionmentioning

confidence: 99%

N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

Mare¹,

Das²,

Das³

et al. 2011

J. Phys. D: Appl. Phys.

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Abstract:Dilute nitride InGaAsN layers with high In content have been grown on InAs substrates by liquid phase epitaxy using GaN as a precursor for N in the growth solution. Photoluminescence (PL) was obtained in the mid-infrared spectral range at temperatures between 4-300 K. Although Ga increases the InAs bandgap, the strong band anti-crossing effect from the N incorporation resulted in an overall bandgap reduction of 11 meV compared with InAs. The temperature-dependent PL exhibited a complicated behavior and showed an anomalous increase in intensity from 190 K to room temperature. This was due to the formation of a complex defect which behaves as a non-radiative recombination centre and prevents radiative band-band recombination at temperatures < 190 K. Above this temperature the PL increases as band-band transitions become allowed. The formation of this defect requires the presence of both Ga and N and becomes de-activated after a high temperature anneal. Raman spectroscopy confirmed the presence of phonon modes associated with In-N and Ga-N bonds confirming the incorporation of N using liquid phase growth.Confidential: not for distribution.

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Molecular beam epitaxial growth of InAsN:Sb for midinfrared Optoelectronics

Cited by 27 publications

References 25 publications

Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires

Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires

Automated numerical characterization of dilute semiconductors per comparison with luminescence

N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

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