Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates

Abstract

GaAs pseudomorphic high electron mobility transistor (PHEMT) structures were grown by molecular beam epitaxy on germanium substrates and composite silicon template wafers incorporating silicon and germanium transferred layers. Windows were etched down to the buried germanium layer and subsequent blanket material growth resulted in single crystal growth in the windows and polycrystalline growth on the top SiO2 surface. Wire growth was eliminated at the window edges and on the top SiO2 surface. Secondary ion mass spectrometry measurements and transmission electron micrographs of GaAs grown on germanium indicated an abrupt GaAs–Ge interface with little penetration of antiphase boundaries or other defects into the GaAs layer. For PHEMT material grown on silicon template wafers, a surface roughness of 8 Å was measured by atomic force microscopy. The room temperature photoluminescence intensity of the InGaAs channel in the PHEMT structure was equivalent to that grown on GaAs substrates. Measured PHEMT mobilities and sheet densities were comparable to those obtained on GaAs substrates. Transistors were fabricated with 0.25 μm gates. The maximum dc current density, 520 mA/mm, and transconductance, 360 mS/mm, were very similar to devices fabricated on GaAs substrates.

Effects of A sTian, Chen, Bian et al. 2024J. Phys.: Condens. Matter0000View full textAdd to dashboardCite

“…In the field of crystal simulation growth, most of the researches have focused on the growth of thin films with heteroepitaxial GaAs [12][13][14][15][16][17][18], GaAs as substrates [19][20][21][22][23][24][25], and silicon carbide third-generation semiconductors [26][27][28][29]. However, heteroepitaxial growth encounters problems, such as lattice mismatch [30] and thermal adaptation, affecting the film growth, whereas homoepitaxial growth [31] can solve such problems.…”

Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopy

“…III-V on Ge has received increased interest recently due to possible application in future integrated circuit technologies. 22,23 Since In 0.48 Al 0.52 P is lattice-matched to both GaAs and Ge, and has a relatively large band-gap, it has potential application as a barrier layer in III-V on Ge epilayer structures. As a result, the band-alignment between InAlP/Ge may be of interest, both as a potential barrier in the application of III-V on Ge wafer growth, and as an interfacial layer in device applications.…”