Abstract:Gallium arsenide (GaAs) materials have the advantages of high electron mobility, electron saturation drift rate, and other irreplaceable semiconducting properties. They play an important role in the electronics, solar and other fields. However, during GaAs film sedimentary growth, As atoms can undergo segregation to form As8 clusters because of the influence of external factors, which affect the surface morphology and internal structure of these films. In this study, a series of investigations on the depositio… Show more
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