2018
DOI: 10.1016/j.nanoen.2017.12.047
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Modulations of various alkali metal cations on organometal halide perovskites and their influence on photovoltaic performance

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Cited by 149 publications
(117 citation statements)
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“…As shown in Figure a, the cell device is composed of a multi‐layered structure of FTO/ c ‐TiO 2 / m ‐TiO 2 /Cs 1‐x R x PbBr 3 /carbon, in which the monolayer‐vertical structured perovskite grains are expected to facilitate charge transfer and suppress charge recombination. The absence of HTLs significantly reduces the production cost and simplifies fabrication processes . Figure b displays photocurrent‐voltage ( J‐V ) curves for inorganic PSCs with or without alkali metal cations doping and the corresponding photovoltaic parameters are summarized in Table .…”
Section: Resultsmentioning
confidence: 99%
“…As shown in Figure a, the cell device is composed of a multi‐layered structure of FTO/ c ‐TiO 2 / m ‐TiO 2 /Cs 1‐x R x PbBr 3 /carbon, in which the monolayer‐vertical structured perovskite grains are expected to facilitate charge transfer and suppress charge recombination. The absence of HTLs significantly reduces the production cost and simplifies fabrication processes . Figure b displays photocurrent‐voltage ( J‐V ) curves for inorganic PSCs with or without alkali metal cations doping and the corresponding photovoltaic parameters are summarized in Table .…”
Section: Resultsmentioning
confidence: 99%
“…[43][44][45] The Nyquist plots weremeasured under 1sun illuminationwith an applied bias voltage of 0.8 Vint he frequency range from 2MHz to 0.5 Hz. [39,47] In the presentc ase, the device without t-BAI doping exhibits as lope of 1.87 kT/q, [48,49] indicating as trong energy loss owing to trap-assisted recombination. In the plots, the low-frequency one relatest ot he recombination resistance (R rec )a tt he interface of the perovskite/charget ransport layer (CTL), the high-frequency one concerns the charge-transfer resistance( R ct )f rom perovskite to CTL, and R s is the sheet resistance of the conductive electrode.…”
Section: Resultsmentioning
confidence: 58%
“…It is well known that the slope deviation from kT/q (in which q denotes elementary charge, k is the Boltzmann constant, and T represents absolutet emperature) reflects the trap-assisted recombination. [39,47] In the presentc ase, the device without t-BAI doping exhibits as lope of 1.87 kT/q, [48,49] indicating as trong energy loss owing to trap-assisted recombination. [50,51] The device doped with t-BAI shows am uch smaller slope of 1.50 kT/q,i ndicating efficient carrier extraction,a nd thus, ah igh FF.T he reduced charge traps can be regarded as ar esult of the increased perovskite grain sizes and reduced grain boundaries.…”
Section: Resultsmentioning
confidence: 58%
“…The solid‐state ionization potential value ( I p ) was measured as 5.24 eV. This value suggests that V1160 is compatible with the perovskite (valence band edge—5.6–5.8 eV) energy levels, ensuring good charge extraction.…”
Section: Methodsmentioning
confidence: 93%